Showing 641–656 of 1232 results

  • Magnesium Oxide (MgO) Single Crystal Wafers

    Magnesium Oxide (MgO) Single Crystal Wafers

    Price range: $850.63 through $1,067.82

    Magnesium Oxide (MgO) Single Crystal Wafer Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a = 4.216 Angstrom – Density: 3.58 g/cm³ – Melting Point: 2852 °C – Mohs Hardness: 5.5 – Growth Method: Arc Fusion Standard Specifications: – Orientation Accuracy: (100) < 0.3°; (110)/(111) < 0.5° – Surface Roughness: Ra < 0.5…

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  • Magnesium Oxide (MgO) Sputtering Target, 99.99% Purity, Circular

    Magnesium Oxide (MgO) Sputtering Target, 99.99% Purity, Circular

    Price range: $488.65 through $1,049.72

    Magnesium Oxide (MgO) Sputtering Target, 99.99% Purity, Circular ZHC LAB’s Magnesium Oxide (MgO) sputtering target is a 99.99% purity oxide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and specified material…

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  • Manganese (Mn) Pellets, 99.8% Purity

    Manganese (Mn) Pellets, 99.8% Purity

    Price range: $179.58 through $208.82

    Manganese (Mn) Pellets, 99.8% Purity Nanostore Manganese (Mn) pellets are source materials supplied for thin-film deposition research, evaporation source loading, alloy preparation, and laboratory materials development. The pellet and piece formats are convenient for weighing, loading, and small-batch experimental workflows where material identity, purity selection, and clean handling are important. Key Features Elemental Source Material…

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  • Manganese (Mn) Sputtering Target, 99.9% Purity, Circular

    Manganese (Mn) Sputtering Target, 99.9% Purity, Circular

    Price range: $388.41 through $1,550.91

    Manganese (Mn) Sputtering Target, 99.9% Purity, Circular ZHC LAB’s Manganese (Mn) sputtering target is a 99.9% purity high-purity transition metal PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and specified material identity…

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  • Manganese Dioxide (MnO2) Evaporation Pellets, 99.99% Purity

    Manganese Dioxide (MnO₂) Evaporation Pellets, 99.99% Purity

    Price range: $215.78 through $449.67

    Manganese Dioxide (MnO₂) Evaporation Pellets, 99.99% Purity Nanostore Manganese Dioxide (MnO₂) evaporation pellets are compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity are important….

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  • Manganese Dioxide (MnO2) Sputtering Target, 99.99% Purity, Circular

    Manganese Dioxide (MnO₂) Sputtering Target, 99.99% Purity, Circular

    Price range: $551.30 through $1,336.51

    Manganese Dioxide (MnO₂) Sputtering Target, 99.99% Purity, Circular Nanostore’s Manganese Dioxide (MnO₂) sputtering target is a 99.99% purity transition-metal oxide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Key Features Source Material Supplied as 99.99% Purity…

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  • Manganese Monoxide (MnO) Single Crystal SubstrateManganese Monoxide (MnO) Single Crystal Substrate – view 2

    Manganese Monoxide (MnO) Single Crystal Substrate | Price on Request

    Price upon request

    Manganese Monoxide (MnO) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a = 4.43 Angstrom – Melting Point: 1945 °C – Density: 5.43 g/cm³ – Color: dark green

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  • Manganese Selenide (MnSe) Sputtering Target, 99.9% Purity, Mn:Se 1:1 at%, Circular

    Manganese Selenide (MnSe) Sputtering Target, 99.9% Purity, Mn:Se 1:1 at%, Circular

    $1,819.61

    Manganese Selenide (MnSe) Sputtering Target, 99.9% Purity, Mn:Se 1:1 at%, Circular Nanostore’s Manganese Selenide (MnSe) sputtering target is a 99.9% purity, mn:se 1:1 at% compound chalcogenide PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Key Features Source…

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  • Manganese Telluride Alloy (MnTe) Sputtering Target, 99.9% Purity, Mn:Te = 1:1.3 at%, Circular (Price Upon Request)

    Manganese Telluride Alloy (MnTe) Sputtering Target, 99.9% Purity, Mn:Te = 1:1.3 at%, Circular (Price Upon Request)

    Price upon request

    Manganese Telluride Alloy (MnTe) Sputtering Target, 99.9% Purity, Mn:Te = 1:1.3 at%, Circular (Price Upon Request) Nanostore’s Manganese Telluride Alloy (MnTe) sputtering target is a 99.9% purity, mn:te = 1:1.3 at% custom chalcogenide alloy PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research,…

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  • Manual Vacuum Suction Pen (SMT72-ESD)

    Manual Vacuum Suction Pen (SMT72-ESD)

    $65.42

    Manual Vacuum Suction Pen (SMT72-ESD) Application: Designed for precision handling in laboratories and SMT assembly. Applicable for picking up electronic components, lenses, and chips without direct contact, preventing contamination and damage. Key Features: * specialized Technology: Utilizes technology referencing US MTI standards with a unique suction cup structure for consistent handling. * ESD appropriate Material…

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  • Mechanically Exfoliated Black Phosphorus FET DeviceMechanically Exfoliated Black Phosphorus FET Device – view 2

    Mechanically Exfoliated Black Phosphorus FET Device

    $835.32

    Mechanically Exfoliated Black Phosphorus FET Device Black Phosphorus (BP) FET Device Device Structure: Highly Doped Conductive Si Substrate / 300 nm SiO₂ Layer / Au Electrodes / Mechanically Exfoliated Few-Layer Black Phosphorus Device Specifications: Channel Width: 5 µm Few-Layer Black Phosphorus (BP) For specific thickness requirements, please contact us. Device Description & Features: High-Mobility 2D…

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  • Mechanically Exfoliated HfS2 FET DeviceMechanically Exfoliated HfS2 FET Device – view 2

    Mechanically Exfoliated HfS₂ FET Device

    $835.32

    Mechanically Exfoliated HfS₂ FET Device Device Structure: Au Electrodes / HfS₂ / 300 nm SiO₂ / Si Back-Gated FET HfS₂ Layer Options: Few-layer (~5 layers) Multilayer (~10 layers) For specific thickness requirements, please contact us. Device Description & Features: High-Mobility 2D Semiconductor: Hafnium disulfide (HfS₂) is a layered transition metal dichalcogenide (TMD) with high electron…

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  • Mechanically Exfoliated Monolayer Graphene FET

    Mechanically Exfoliated Monolayer Graphene FET

    $835.32

    Mechanically Exfoliated Monolayer Graphene FET Device Structure: Highly Doped Conductive Si Substrate / 300 nm SiO₂ Layer / Monolayer Graphene / Cr+Au Electrodes Device Specifications: Graphene Thickness: Monolayer Electrode Material: Cr+Au Gate Dielectric: 300 nm SiO₂ Applications include specific device modifications, please contact us. Device Description & Features: Ultra-High Carrier Mobility: Graphene exhibits ballistic transport,…

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  • Mechanically Exfoliated ReS2 FET Device

    Mechanically Exfoliated ReS₂ FET Device

    $835.32

    Mechanically Exfoliated ReS₂ FET Device ReS₂ FET (Back-Gated ReS₂ FET) Device Structure: Au Electrodes / ReS₂ / 300 nm SiO₂ / Si Back-Gated FET Device Specifications: Channel Width: 5 µm Few-layer (~5 layers) Multilayer (~10 layers) For specific thickness requirements, please contact us. Device Description & Features: Anisotropic 2D Semiconductor: Rhenium disulfide (ReS₂) is a…

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  • Mechanically Exfoliated ReSe2 FET DeviceMechanically Exfoliated ReSe2 FET Device – view 2

    Mechanically Exfoliated ReSe₂ FET Device

    $835.32

    Mechanically Exfoliated ReSe₂ FET Device ReSe₂ FET (Back-Gated ReSe₂ FET) Device Structure: Au Electrodes / ReSe₂ / 300 nm SiO₂ / Si Back-Gated FET ReSe₂ Layer Options: Few-layer (~5 layers) Multilayer (~10 layers) For specific thickness requirements, please contact us. Device Description & Features: Anisotropic 2D Semiconductor: Rhenium diselenide (ReSe₂) is a layered transition metal…

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  • Mechanically Exfoliated WS2 FET DeviceMechanically Exfoliated WS2 FET Device – view 2

    Mechanically Exfoliated WS₂ FET Device

    $835.32

    Mechanically Exfoliated WS₂ FET Device WS₂ FET (Back-Gated WS₂ FET) Device Structure: Au Electrodes / WS₂ / 300 nm SiO₂ / Si Back-Gated FET WS₂ Layer Options: Monolayer Few-layer ( ~5 layers) Multilayer (~10 layers) Applications include specific thickness requirements, please contact us. Device Description & Features: Standard 2D Semiconductor: Tungsten disulfide (WS₂) is a…

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