Tungsten Disulfide (WS₂) Film on 4-Inch Sapphire Wafer

Tungsten Disulfide (WS₂) Film on 4-Inch Sapphire Wafer

CAS Number: 12138-09-9

Substrate Size: 4-Inch Sapphire Wafer

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
WS₂ films are grown directly on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Tungsten disulfide (WS₂) is a layered transition metal dichalcogenide (TMD) with in-plane covalent bonding and weak van der Waals interactions between layers. Monolayer WS₂ has a direct bandgap of approximately 2.05 eV, supporting light absorption and emission in optoelectronic applications. In its bulk form, WS₂ exhibits an indirect bandgap of around 1.35 eV. The bandgap of WS₂ varies with the number of layers, transitioning between direct and indirect as the thickness increases. WS₂ also displays photoluminescence, thermal and chemical stability, and spin-orbit coupling, and it is used for listed technologies. Its mechanical flexibility and environmental stability support its use in flexible and wearable devices.

Applications:
Optoelectronics: Monolayer WS₂ is used for photodetectors, light-emitting diodes, and laser devices due to its direct bandgap and light-matter interaction. Energy Storage and Conversion: WS₂ is a material for hydrogen evolution reactions (HER) in catalysis and as an active electrode material in lithium-ion batteries.
Microelectronics: Its thin, layered structure and electronic properties make WS₂ a channel material for field-effect transistors (FETs).
Sensors: WS₂ exhibits sensitivity in biosensing and chemical sensing applications, enabling the detection of biological molecules and gases.
Quantum Technologies: WS₂’s spin-valley coupling properties are used for quantum computing and communication technologies.