Platinum Diselenide (PtSe₂)

Platinum Diselenide (PtSe₂)

CAS Number: 12038-26-5

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
PtSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Platinum diselenide (PtSe₂) is a layered transition metal dichalcogenide (TMD) with a semimetallic character in its bulk form. Unlike many other TMDs, PtSe₂ exhibits a transition from semimetallic to semiconducting behavior as it transitions from bulk to monolayer. Monolayer PtSe₂ has an indirect bandgap of approximately 1.2 eV, and it is used in electronics and optoelectronics. PtSe₂ also possesses environmental stability, carrier mobility, and spin-orbit coupling, supporting applications. Its catalytic activity further supports its use in energy and chemical applications.

Applications:
Electronics: PtSe₂’s semiconducting properties in its monolayer form and semimetallic behavior in bulk support use in field-effect transistors (FETs) and other electronic devices.
Optoelectronics: The tunable bandgap of PtSe₂ allows for its integration into photodetectors, solar cells, and light sensors. Energy Storage and Catalysis: PtSe₂ demonstrates catalytic activity for hydrogen evolution reactions (HER) and is a material for energy storage devices, including supercapacitors and batteries.
Sensors: PtSe₂-based gas and chemical sensors exhibit sensitivity and selectivity, owing to its electronic properties.
Quantum Technologies: Its spin-orbit coupling supports spintronic applications and other quantum technologies.