Rhenium Disulfide (ReS₂)

Rhenium Disulfide (ReS₂)

CAS Number: 12038-63-0

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
ReS₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Rhenium disulfide (ReS₂) is a transition metal dichalcogenide (TMD) with a distorted 1T crystal structure, resulting in weak interlayer coupling. Unlike many TMDs, ReS₂ exhibits nearly layer-independent properties due to its in-plane anisotropy and lack of interlayer registry. It is used for studying layer-dependent properties. Monolayer ReS₂ has an indirect bandgap of approximately 1.4 eV, and it retains semiconducting behavior across multiple layers. Its mechanical flexibility, anisotropic optical properties, and environmental stability are studied for the listed technologies.

Applications:
Optoelectronics: ReS₂’s layer-independent optical properties support its use for photodetectors and other optoelectronic devices.
Electronics: ReS₂ is used in field-effect transistors (FETs) due to its tunable electronic properties and stability.
Sensors: The anisotropic nature of ReS₂ is used in gas and chemical sensing research. Energy Applications: ReS₂ is studied for catalytic applications, including hydrogen evolution reactions (HER), and as an electrode material in energy storage devices. Photonics and Nonlinear Optics: The anisotropic optical response of ReS₂ supports its use in polarization-sensitive photonic devices.