Palladium Diselenide (PdSe₂)

Palladium Diselenide (PdSe₂)

CAS Number: 60672-19-7

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Morphology Options:
PdSe₂ films are available with a minimum thickness of 2 nm. For specific thickness requirements, please contact us directly.

Substrate Options:
PdSe₂ thin films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Palladium diselenide (PdSe₂) is a layered transition metal dichalcogenide (TMD) with pentagonal crystal structure. It exhibits a transition from semimetallic behavior in bulk form to semiconducting properties in thinner layers. Monolayer PdSe₂ has an indirect bandgap of approximately 1.3 eV, which supports its use in optoelectronic and photonic applications. PdSe₂ has environmental stability, shows anisotropic properties, and has carrier mobility. These characteristics support applications in electronics, sensing, and energy storage. Additionally, its electronic structure and catalytic activity support its use in hydrogen evolution reactions (HER) and other energy-related applications.

Applications:
Optoelectronics: The layer-dependent bandgap and anisotropic optical properties of PdSe₂ support its use for photodetectors and light sensors.
Electronics: Carrier mobility and tunable electronic properties support its use in field-effect transistors (FETs) and other electronic devices. Energy Applications: PdSe₂ demonstrates catalytic activity for HER and is studied as a material for batteries and supercapacitors.
Sensors: PdSe₂-based sensors exhibit sensitivity and environmental stability, supporting their use in detecting gases and chemicals.
Quantum Technologies: Its electronic structure supports research in quantum computing and material systems.