Bismuth Telluride (Bi₂Te₃)

Bismuth Telluride (Bi₂Te₃)

CAS Number: 1304-82-1

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
Bi₂Te₃ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Bismuth telluride (Bi₂Te₃) is a layered material with a rhombohedral crystal structure. It is a thermoelectric material with thermoelectric figure-of-merit (ZT) values at room temperature. Bi₂Te₃ also exhibits topological insulating behavior, with metallic surface states protected by time-reversal symmetry and an insulating bulk, supporting spintronics and quantum technologies. Bi₂Te₃ has a narrow bandgap of approximately 0.15 eV, thermal stability, and electronic properties that support applications in thermoelectrics, sensors, and electronics.

Applications:
Thermoelectric Devices: Bi₂Te₃ is used in thermoelectric generators and coolers due to its ZT value at room temperature.
Topological Insulators: Its surface states support its use in quantum computing and spintronic applications.
Electronics: Bi₂Te₃ can be utilized as a functional layer in electronic devices due to its electronic properties.
Sensors: Bi₂Te₃’s properties support chemical and gas sensors.
Energy Harvesting: Its thermoelectric properties support the conversion of waste heat into electrical energy.