Substrates & Wafers

Showing 145–160 of 208 results

Silicon (Si) Single Crystal Wafers (N-type, doped)
Price range: zł181.23 through zł989.25
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

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Silicon (Si) Single Crystal Wafers (P-type, doped)
Price range: zł181.23 through zł833.86
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

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Silicon (Si) Single Crystal Wafers (Undoped)
Price range: zł181.23 through zł989.25
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

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Silicon Carbide (N-type 3C-SiC) Single Crystal Substrates
Price range: zł1,175.71 through zł1,362.18
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (N-type 3C-SiC) Single Crystal Wafers
zł5,153.62
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (N-type 4H-SiC) Single Crystal Substrates
Price range: zł207.13 through zł989.25
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (N-type 4H-SiC) Single Crystal Wafers
Price range: zł927.09 through zł6,272.41
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (N-type 6H-SiC) Single Crystal Substrates
Price range: zł989.25 through zł1,175.71
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (N-type 6H-SiC) Single Crystal Wafers
zł2,978.20
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (P-type 4H-SiC) Single Crystal Substrates
Price range: zł978.89 through zł1,175.71
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (P-type 4H-SiC) Single Crystal Wafers
zł4,345.61
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (P-type 6H-SiC) Single Crystal Substrates
Price range: zł864.94 through zł989.25
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (P-type 6H-SiC) Single Crystal Wafers
zł2,418.81
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (SI 4H-SiC) Single Crystal Substrates
Price range: zł243.39 through zł1,051.40
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (SI 4H-SiC) Single Crystal Wafers
Price range: zł989.25 through zł7,329.04
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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Silicon Carbide (SI 6H-SiC) Single Crystal Substrates
Price range: zł1,113.56 through zł1,362.18
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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