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Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Ceramic Plates / SiC Structural Ceramic Components Product Overview Silicon Carbide (SiC) ceramic plates are structural ceramics used in extreme temperature and harsh operating environments. Manufactured using pressureless sintering technology, these SiC ceramics have thermal conductivity, oxidation resistance, thermal-shock resistance, and mechanical strength. They are used in high-temperature furnaces, heat treatment systems,…
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