Silicon (Si) Single Crystal Wafers (N-type, doped)
価格帯: ¥7,779 – ¥42,460Silicon (Si) Single Crystal Substrates (Wafers) 物理的特性: – 結晶構造: Cubic System – 格子定数: a=5.4301 Angstrom – 硬度: 6.…
結果の145～160/208を表示しています
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Silicon (Si) Single Crystal Wafers (P-type, doped)
価格帯: ¥7,779 – ¥35,790Silicon (Si) Single Crystal Substrates (Wafers) 物理的特性: – 結晶構造: Cubic System – 格子定数: a=5.4301 Angstrom – 硬度: 6.…
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Silicon (Si) Single Crystal Wafers (Undoped)
価格帯: ¥7,779 – ¥42,460Silicon (Si) Single Crystal Substrates (Wafers) 物理的特性: – 結晶構造: Cubic System – 格子定数: a=5.4301 Angstrom – 硬度: 6.…
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Silicon Carbide (N-type 3C-SiC) Single Crystal Substrates
価格帯: ¥50,463 – ¥58,466Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (N-type 3C-SiC) Single Crystal Wafers
¥221,201Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (N-type 4H-SiC) Single Crystal Substrates
価格帯: ¥8,890 – ¥42,460Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性 (3C-SiC vs 4H-SiC vs 6H-SiC): – 格子定数: – 4H-SiC:…
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Silicon Carbide (N-type 4H-SiC) Single Crystal Wafers
価格帯: ¥39,792 – ¥269,221Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (N-type 6H-SiC) Single Crystal Substrates
価格帯: ¥42,460 – ¥50,463Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (N-type 6H-SiC) Single Crystal Wafers
¥127,829Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (P-type 4H-SiC) Single Crystal Substrates
価格帯: ¥42,015 – ¥50,463Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (P-type 4H-SiC) Single Crystal Wafers
¥186,520Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (P-type 6H-SiC) Single Crystal Substrates
価格帯: ¥37,124 – ¥42,460Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (P-type 6H-SiC) Single Crystal Wafers
¥103,819Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (SI 4H-SiC) Single Crystal Substrates
価格帯: ¥10,447 – ¥45,128Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (SI 4H-SiC) Single Crystal Wafers
価格帯: ¥42,460 – ¥314,573Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (SI 6H-SiC) Single Crystal Substrates
価格帯: ¥47,795 – ¥58,466Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …