SiO2 Single Crystal Substrates
SiO₂

SiO₂ Single Crystal Substrates

가격 범위: ₩32,256~₩51,241

※ 원화(KRW) 기준 참고 가격입니다(대한민국 부가가치세 미포함).

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SiO₂ Single Crystal Substrate

물리적 특성:
– 결정 구조: Hexagonal System
– 격자 상수: a=4.914 Angstrom, c=5.405 Angstrom
– 밀도: 2.65 g/cm³
– 융점: 1700 °C(상전이 온도 573.1°C)
– 경도: 7 (Mohs)
– 성장 방법: 수열법

표준 사양:

1. 방위 / 컷
– Z-cut (001), X-cut (110), Y-cut (100): 미스컷 < 0.3°
– ST-cut, AT-cut: 제공 가능

2. 에지 방위
– 제공 가능

3. 표면 품질
– 표면 조도: Ra < 0.5 nm (CMP)
– 연마: Single-side polished / Double-side polished

옵션 1

10 × 10 × 0.5 mm, X-cut (110), Double-Side Polished, 10 × 10 × 0.5 mm, X-cut (110), Single-Side Polished, 10 × 10 × 0.5 mm, Y-cut (100), Double-Side Polished, 10 × 10 × 0.5 mm, Y-cut (100), Single-Side Polished, 10 × 10 × 0.5 mm, Z-cut (001), Double-Side Polished, 10 × 10 × 0.5 mm, Z-cut (001), Single-Side Polished, 5 × 5 × 0.5 mm, X-cut (110), Double-Side Polished, 5 × 5 × 0.5 mm, X-cut (110), Single-Side Polished, 5 × 5 × 0.5 mm, Y-cut (100), Double-Side Polished, 5 × 5 × 0.5 mm, Y-cut (100), Single-Side Polished, 5 × 5 × 0.5 mm, Z-cut (001), Double-Side Polished, 5 × 5 × 0.5 mm, Z-cut (001), Single-Side Polished

연관 상품