SiO2 Single Crystal Substrates
SiO₂

SiO₂ Single Crystal Substrates

価格帯: ¥3,667 – ¥5,825

※日本円による参考価格（日本の消費税は含まれません）

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SiO₂ Single Crystal Substrate

物理的特性:
– 結晶構造: Hexagonal System
– 格子定数: a=4.914 Angstrom, c=5.405 Angstrom
– 密度: 2.65 g/cm³
– 融点: 1700 °C (Phase transition temp 573.1°C)
– 硬度: 7 (Mohs)
– 育成方法: Hydrothermal

標準仕様:

1. 方位 / カット
– Z-cut (001), X-cut (110), Y-cut (100): miscut < 0.3°
– ST-cut, AT-cut: Available

2. エッジ方位
– Available

3. 表面品質
– 表面粗さ: Ra < 0.5 nm (CMP)
– 研磨: Single-side polished / Double-side polished

オプション1

10 × 10 × 0.5 mm, X-cut (110), Double-Side Polished, 10 × 10 × 0.5 mm, X-cut (110), Single-Side Polished, 10 × 10 × 0.5 mm, Y-cut (100), Double-Side Polished, 10 × 10 × 0.5 mm, Y-cut (100), Single-Side Polished, 10 × 10 × 0.5 mm, Z-cut (001), Double-Side Polished, 10 × 10 × 0.5 mm, Z-cut (001), Single-Side Polished, 5 × 5 × 0.5 mm, X-cut (110), Double-Side Polished, 5 × 5 × 0.5 mm, X-cut (110), Single-Side Polished, 5 × 5 × 0.5 mm, Y-cut (100), Double-Side Polished, 5 × 5 × 0.5 mm, Y-cut (100), Single-Side Polished, 5 × 5 × 0.5 mm, Z-cut (001), Double-Side Polished, 5 × 5 × 0.5 mm, Z-cut (001), Single-Side Polished

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