4개 결과 모두 표시
Indium Arsenide (InAs) Single Crystal Substrates, <100> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…
Indium Arsenide (InAs) Single Crystal Substrates, <111> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…
Indium Arsenide (InAs) Single Crystal Wafers, <100> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…
Indium Arsenide (InAs) Single Crystal Wafers, <111> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…
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