SiO2 Single Crystal Wafers
SiO₂

SiO₂ Single Crystal Wafers

価格帯: ¥12,301 – ¥43,166

※日本円による参考価格（日本の消費税は含まれません）

オプションを選択のうえお見積もりをご依頼ください

SiO₂ Single Crystal Wafer

物理的特性:
– 結晶構造: Hexagonal System
– 格子定数: a=4.914 Angstrom, c=5.405 Angstrom
– 密度: 2.65 g/cm³
– 融点: 1700 °C（相転移温度 573.1°C）
– 硬度: 7 (Mohs)
– 育成方法: 水熱法

標準仕様:

1. 方位／カット
– Z-cut (001), X-cut (110), Y-cut (100): miscut < 0.3°
– ST-cut, AT-cut: 対応可能

2. エッジ方位
– 対応可能

3. 表面品質
– 表面粗さ: Ra < 0.5 nm (CMP)
– 研磨: Single-side polished / Double-side polished

オプション1

1″ dia × 0.5 mm, X-cut (110), Double-Side Polished, 1″ dia × 0.5 mm, X-cut (110), Single-Side Polished, 1″ dia × 0.5 mm, Y-cut (100), Double-Side Polished, 1″ dia × 0.5 mm, Y-cut (100), Single-Side Polished, 1″ dia × 0.5 mm, Z-cut (001), Double-Side Polished, 1″ dia × 0.5 mm, Z-cut (001), Single-Side Polished, 2″ dia × 0.5 mm, X-cut (110), Double-Side Polished, 2″ dia × 0.5 mm, X-cut (110), Single-Side Polished, 2″ dia × 0.5 mm, Y-cut (100), Double-Side Polished, 2″ dia × 0.5 mm, Y-cut (100), Single-Side Polished, 2″ dia × 0.5 mm, Z-cut (001), Double-Side Polished, 2″ dia × 0.5 mm, Z-cut (001), Single-Side Polished, 3″ dia × 0.5 mm, X-cut (110), Double-Side Polished, 3″ dia × 0.5 mm, X-cut (110), Single-Side Polished, 3″ dia × 0.5 mm, Y-cut (100), Double-Side Polished, 3″ dia × 0.5 mm, Y-cut (100), Single-Side Polished, 3″ dia × 0.5 mm, Z-cut (001), Double-Side Polished, 3″ dia × 0.5 mm, Z-cut (001), Single-Side Polished, 4″ dia × 0.5 mm, X-cut (110), Double-Side Polished, 4″ dia × 0.5 mm, X-cut (110), Single-Side Polished, 4″ dia × 0.5 mm, Y-cut (100), Double-Side Polished, 4″ dia × 0.5 mm, Y-cut (100), Single-Side Polished, 4″ dia × 0.5 mm, Z-cut (001), Double-Side Polished, 4″ dia × 0.5 mm, Z-cut (001), Single-Side Polished

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