Black Phosphorus/ReSe₂ FET Device
¥133,386Black Phosphorus/ReSe₂ FET Device Heterojunction FET Device Device Structure: Conductive Si Substrate / 300 nm…
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Graphene FET Device
¥133,386Graphene FET Device Device Structure: Conductive Si Substrate / 300 nm SiO₂ Layer / Graphene Channel / Cr+Au E…
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Mechanically Exfoliated Black Phosphorus FET Device
¥133,386Mechanically Exfoliated Black Phosphorus FET Device Black Phosphorus (BP) FET Device Device Structure: Highly …
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Mechanically Exfoliated HfS₂ FET Device
¥133,386Mechanically Exfoliated HfS₂ FET Device Device Structure: Au Electrodes / HfS₂ / 300 nm SiO₂ / Si Back-Gated F…
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Mechanically Exfoliated Monolayer Graphene FET
¥133,386Mechanically Exfoliated Monolayer Graphene FET Device Structure: Highly Doped Conductive Si Substrate / 300 nm…
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Mechanically Exfoliated ReS₂ FET Device
¥133,386Mechanically Exfoliated ReS₂ FET Device ReS₂ FET (Back-Gated ReS₂ FET) Device Structure: Au Electrodes / ReS₂ …
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Mechanically Exfoliated ReSe₂ FET Device
¥133,386Mechanically Exfoliated ReSe₂ FET Device ReSe₂ FET (Back-Gated ReSe₂ FET) Device Structure: Au Electrodes / Re…
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Mechanically Exfoliated WS₂ FET Device
¥133,386Mechanically Exfoliated WS₂ FET Device WS₂ FET (Back-Gated WS₂ FET) Device Structure: Au Electrodes / WS₂ / 30…
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Monolayer 2H-MoTe₂ FET Device
¥133,386Monolayer 2H-MoTe₂ FET Device Device Structure: Conductive Si Substrate / 300 nm SiO₂ Layer / 5 µm Gold Electr…
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MoS₂ FET Device
¥133,386MoS₂ FET Device Device Structure: Conductive Si Substrate / 300 nm SiO₂ Layer / Few-layer or Multilayer MoS₂ /…
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Multilayer ReS₂/PdSe₂ FET Device
¥133,386Multilayer ReS₂/PdSe₂ FET Device Device Structure: Conductive Si Substrate / 285 nm SiO₂ / Au Electrodes / Exf…
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WS₂ FET Device
¥133,386WS₂ FET Device Device Specifications: Packaging: Single device (1 unit per package) Device Dimensions: 1 cm x …
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WSe₂ FET Device
¥133,386WSe₂ FET Device Device Specifications: Packaging: Single device (1 unit per package) Device Dimensions: 1 cm x…