🇺🇸United States · USD▾
🇺🇸United States · USD▾
Showing 1169–1184 of 1232 results
WS₂ Crystals WS₂ is a layered transition metal dichalcogenide (TMD) with a van der Waals structure and electronic, optical, and catalytic properties. It exhibits a direct bandgap (~2.0 eV) in monolayer form and an indirect bandgap (~1.4 eV) in bulk, supporting applications in nanoelectronics, optoelectronics, and energy conversion. WS₂ crystals are synthesized using the Chemical…
WS₂ FET Device Device Specifications: Packaging: Single device (1 unit per package) Device Dimensions: 1 cm x 1 cm Substrate: SiO₂/Si (Silicon with 300 nm SiO₂ layer) Device Structure: SiO₂/Si Substrate / WS₂ Channel / Au or Cr+Au Electrodes Device Description & Features: Standard 2D Semiconductor: Tungsten disulfide (WS₂) is a layered transition metal dichalcogenide…
WSe₂ Crystals WSe₂ (Tungsten Diselenide) is a layered transition metal dichalcogenide (TMD) with a van der Waals structure and electronic, optical, and quantum properties. It exhibits a variable bandgap, spin-orbit coupling, and charge-carrier mobility, supporting applications in nanoelectronics, optoelectronics, spintronics, and quantum computing. WSe₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method. Sample…
WSe₂ FET Device Device Specifications: Packaging: Single device (1 unit per package) Device Dimensions: 1 cm x 1 cm Substrate: SiO₂/Si (Silicon with 300 nm SiO₂ layer) Device Structure: SiO₂/Si Substrate / WSe₂ Channel / Au or Cr+Au Electrodes Device Description & Features: WSe₂ layered 2D Semiconductor: Tungsten diselenide (WSe₂) is a layered transition metal…
WSeTe Crystals WSeTe is a layered transition metal chalcogenide alloy with a van der Waals structure, exhibiting a tunable bandgap and topological properties. As a mixed chalcogenide alloy, WSeTe offers a platform for studying quantum phenomena, spin-orbit coupling, and electronic transport properties. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm²…
WSSe Crystals WSSe is a layered transition metal dichalcogenide (TMDC) alloy with a van der Waals structure and tunable bandgap and optoelectronic properties. As a mixed chalcogenide, WSSe combines the characteristics of WS₂ and WSe₂, supporting its use in quantum research, optoelectronics, and energy-related applications. Sample Size Options: Crystals larger than 10 mm² Crystals larger…
WTe₂ Crystals WTe₂ (Tungsten Ditelluride) is a layered transition metal dichalcogenide (TMD) with a distorted 1T’ phase structure. It is described as a type-II Weyl semimetal, exhibiting quantum properties such as extremely large magnetoresistance (XMR), non-saturating electrical conductivity, and potential topological states. These properties support applications in spintronics, quantum computing, nanoelectronics, and 2D material research….
Ytterbium Fluoride (YbF₃) Evaporation Pellets, 99.99% Purity Nanostore Ytterbium Fluoride (YbF₃) evaporation pellets are compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity are important….
Ytterbium Oxide (Yb₂O₃) Evaporation Pellets, 99.99% Purity Nanostore Ytterbium Oxide (Yb₂O₃) evaporation pellets are compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity are important….
Ytterbium Oxide (Yb₂O₃) Sputtering Target, 99.99% Purity, Circular (Price Upon Request) Nanostore’s Ytterbium Oxide (Yb₂O₃) sputtering target is a 99.99% purity rare-earth oxide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Pricing is provided upon request…
Yttria-Stabilized Zirconia (YSZ) Single Crystal Substrate Physical Properties: Crystal Structure: Cubic System Lattice Constant: a=5.125 Angstrom Composition Ratio: Y₂O₃:ZrO₂ = 8:92 mol% Density: 5.8 g/cm³ Melting Point: 2800°C Growth Method: Skull Melting Standard Specifications: Orientation: (100) miscut < 0.3 deg (Available < 0.1 deg) Orientation: (110) miscut < 0.3 deg (Available < 0.1 deg) Orientation:…
Yttria-Stabilized Zirconia (YSZ) Single Crystal Wafers Physical Properties: Crystal Structure: Cubic System Lattice Constant: a=5.125 Angstrom Composition Ratio: Y₂O₃:ZrO₂ = 8:92 mol% Density: 5.8 g/cm³ Melting Point: 2800°C Growth Method: Skull Melting Standard Specifications: Orientation: (100) miscut < 0.3 deg (Available < 0.1 deg) Orientation: (110) miscut < 0.3 deg (Available < 0.1 deg) Orientation:…
Yttria-Stabilized Zirconia (ZrO₂:Y₂O₃ 92:8 wt%) Evaporation Pellets, 99.99% Purity (Request Current Price) Nanostore Yttria-Stabilized Zirconia (ZrO₂:Y₂O₃ 92:8 wt%) evaporation pellets are compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean…
Yttria-Stabilized Zirconia (ZrO₂:Y₂O₃) Sputtering Target, 99.9% Purity, ZrO₂:Y₂O₃ = 92:8 at%, Circular (Price Upon Request) Nanostore’s Yttria-Stabilized Zirconia (ZrO₂:Y₂O₃) sputtering target is a 99.9% purity, zro2:y2o3 = 92:8 at% yttria-doped zirconia ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and…
Yttrium Aluminum Garnet (YAG) Single Crystal Substrates Physical Properties: Crystal Structure: Cubic System Lattice Constant: a=12.01 Angstrom Density: 4.56 g/cm³ Melting Point: 1970°C Mohs Hardness: 8.5 Mohs Growth Method: CZ Standard Specifications: Orientation: (111) miscut < 0.3 deg (Available < 0.1 deg) Orientation: (110) miscut < 0.3 deg (Available < 0.1 deg) Orientation: (100) miscut…
Yttrium Aluminum Garnet (YAG) Single Crystal Wafers Physical Properties: Crystal Structure: Cubic System Lattice Constant: a=12.01 Angstrom Density: 4.56 g/cm³ Melting Point: 1970°C Mohs Hardness: 8.5 Mohs Growth Method: CZ Standard Specifications: Orientation: (111) miscut < 0.3 deg (Available < 0.1 deg) Orientation: (110) miscut < 0.3 deg (Available < 0.1 deg) Orientation: (100) miscut…
No products in the cart.
To request a quote, please complete the form below. Your quotation should be received within one working day.
