SiO2 Single Crystal Substrates
SiO₂

SiO₂ Single Crystal Substrates

Price range: $23.65 through $37.58

Select an option to request a quote

SiO₂ Single Crystal Substrate

Physical Properties:
– Crystal Structure: Hexagonal System
– Lattice Parameters: a=4.914 Angstrom, c=5.405 Angstrom
– Density: 2.65 g/cm³
– Melting Point: 1700 °C (Phase transition temp 573.1°C)
– Hardness: 7 (Mohs)
– Growth Method: Hydrothermal

Standard Specifications:

1. Orientation / Cut
– Z-cut (001), X-cut (110), Y-cut (100): miscut < 0.3°
– ST-cut, AT-cut: Available

2. Edge Orientation
– Available

3. Surface Quality
– Surface Roughness: Ra < 0.5 nm (CMP)
– Polish: Single-side polished / Double-side polished

Option 1

10 × 10 × 0.5 mm, X-cut (110), Double-Side Polished, 10 × 10 × 0.5 mm, X-cut (110), Single-Side Polished, 10 × 10 × 0.5 mm, Y-cut (100), Double-Side Polished, 10 × 10 × 0.5 mm, Y-cut (100), Single-Side Polished, 10 × 10 × 0.5 mm, Z-cut (001), Double-Side Polished, 10 × 10 × 0.5 mm, Z-cut (001), Single-Side Polished, 5 × 5 × 0.5 mm, X-cut (110), Double-Side Polished, 5 × 5 × 0.5 mm, X-cut (110), Single-Side Polished, 5 × 5 × 0.5 mm, Y-cut (100), Double-Side Polished, 5 × 5 × 0.5 mm, Y-cut (100), Single-Side Polished, 5 × 5 × 0.5 mm, Z-cut (001), Double-Side Polished, 5 × 5 × 0.5 mm, Z-cut (001), Single-Side Polished

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