Rhenium Diselenide (ReSe₂)

Rhenium Diselenide (ReSe₂)

CAS Number: 12038-64-1

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
ReSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Rhenium diselenide (ReSe₂) is a layered transition metal dichalcogenide (TMD) with a distorted 1T crystal structure, similar to its sulfide counterpart, ReS₂. This structure results in weak interlayer coupling and in-plane anisotropy, giving ReSe₂ nearly layer-independent properties. Its indirect bandgap of approximately 1.2 eV (monolayer) and environmental stability support use in electronic and optoelectronic applications. ReSe₂ also exhibits anisotropic optical and electronic behavior, and it is used for applications requiring polarization sensitivity. Its mechanical flexibility and chemical stability further support its utility in devices.

Applications:
Optoelectronics: ReSe₂ is used for photodetectors and light sensors due to its layer-independent bandgap and anisotropic optical properties.
Electronics: Its mobility and anisotropic electronic properties support the use of ReSe₂ in field-effect transistors (FETs).
Sensors: ReSe₂-based sensors are used for gas and chemical detection and have the stated stability. Energy Applications: ReSe₂ is studied as a catalyst for hydrogen evolution reactions (HER) and as an electrode material in energy storage devices. Photonics and Nonlinear Optics: ReSe₂’s anisotropic optical response supports its use in polarization-sensitive photonic devices.