GaGeTe Crystals

GaGeTe Crystals

GaGeTe is a layered semiconductor with a van der Waals structure, exhibiting unique electronic, optical, and thermoelectric properties. Its anisotropic behavior and high cleavage properties make it an the material for 2D material research, optoelectronics, and quantum materials studies.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²

Material Properties:
Layered van der Waals Structure: Facilitates exfoliation into thin layers for nanoscale research.
Semiconducting Behavior: Features a variable bandgap, making it applicable to optoelectronic devices.
Anisotropic Properties: Exhibits strong direction-dependent electronic and optical behavior.
Thermoelectric Performance: Promising for energy conversion applications due to low thermal conductivity and high Seebeck coefficient.

Crystal Structure:
Type: Rhombohedral layered structure
Features: Cleavable into thin sheets for 2D material studies and heterostructure assembly.

Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for specialized research.

Other Characteristics:
Optoelectronic Potential: Strong light absorption and emission properties, applicable to photonic devices. Energy

Applications: Promising for thermoelectric devices and photocatalysis.
Environmental behavior: Consistent under inert conditions, with moderate sensitivity to air and moisture.

Applications:
Optoelectronics:
Applicable to photodetectors, light-emitting devices, and solar cells.
2D Material Research:
Applicable for studying exfoliated thin layers and assembling with van der Waals heterostructures. Quantum Materials Research:
Permits exploration of low-dimensional electronic and optical properties. Energy

Applications:
Promising for thermoelectric devices, photocatalysis, and energy storage systems. Sensors:
Applicable to specialized sensing applications due to its anisotropic electronic properties. References
1. Drasar, C., et al. “Thermoelectric properties and nonstoichiometry of GaGeTe.” Journal of Solid State Chemistry 193 (2012): 42-46.
2. Wang, Weike, et al. “Ultrathin GaGeTe p-type transistors.” Applied Physics Letters 111.20 (2017): 203504.
3. Kucek, Vladimir, et al. “Optical and transport properties of GaGeTe single crystals.” Journal of Crystal Growth 380 (2013): 72-77.