Bismuth Selenide (Bi₂Se₃)

Bismuth Selenide (Bi₂Se₃)

CAS Number: 12068-69-8

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
Bi₂Se₃ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Bismuth selenide (Bi₂Se₃) is a layered topological insulator with a rhombohedral crystal structure. It exhibits insulating behavior in the bulk but hosts conducting surface states protected by time-reversal symmetry. These surface states have a linear Dirac-like energy dispersion, supporting the use of Bi₂Se₃ in quantum and spintronic applications. Bi₂Se₃ has a narrow bandgap of approximately 0.3 eV and displays thermoelectric properties. Its chemical stability and low thermal conductivity support use in thermoelectric devices and quantum technologies.

Applications:
Topological Insulators: Bi₂Se₃ is studied for its surface states, which are used for spintronics and quantum computing applications.
Thermoelectric Devices: Its thermoelectric properties support its use in power generation and refrigeration technologies.
Electronics: Bi₂Se₃ can serve as a substrate or functional layer in electronic devices due to its electronic properties.
Sensors: Bi₂Se₃’s surface states and electronic properties support chemical and gas sensors.
Photonics: Its optical properties support applications in nonlinear optics and photodetection.