Bi₄Pb₇Se₁₃ Crystals
Bi₄Pb₇Se₁₃ is a layered thermoelectric material with a van der Waals structure, combining strong electronic, optical, and thermoelectric properties. Its high thermoelectric efficiency, strong spin-orbit coupling, and structural behavior make it a promising material for quantum materials research, energy harvesting, and spintronics. Our Bi₄Pb₇Se₁₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method, with high purity, precise stoichiometry, and strong crystallinity.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²
Material Properties:
Layered van der Waals Structure: Facilitates exfoliation into thin layers for 2D material studies.
Thermoelectric Efficiency: High Seebeck coefficient and low thermal conductivity for energy harvesting applications.
Electronic Conductivity: High carrier mobility for electronic and thermoelectric devices.
Optical Absorption: Strong absorption in the visible-to-infrared range, applicable for photonic devices.
Crystal Structure:
Type: Rhombohedral layered structure
Features: Cleavable layers, applicable to thin-film fabrication and nanoscale device assembly.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for specialized research.
Other Characteristics:
Quantum Properties: Promising for studying topological surface states and quantum transport phenomena. Thermoelectric
Applications: Applicable for energy harvesting and thermal management systems. Spintronics
Applications: Applicable to exploring spin-based devices and spin-orbit coupling.
Applications:
Quantum Materials Research:
Permits exploration of topological insulators and associated quantum phenomena. Thermoelectric Devices:
Promising for energy conversion and cooling technologies. Spintronics:
Applicable for spin-based devices and spintronic memory technologies.
2D Material Studies:
Applicable for exfoliation into thin layers and assembly into van der Waals heterostructures. Optoelectronics:
Applicable to photodetectors, sensors, and other optoelectronic devices.
| Option 1 | > 10 mm², > 100 mm², > 25 mm² |
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