InGaS₃ Crystals

InGaS₃ Crystals

InGaS₃ is a ternary layered chalcogenide material with a van der Waals structure, semiconducting properties, and optical absorption. Its electronic and optical behavior can be tuned for optoelectronics, energy applications, and 2D material studies.

Sample Size Options:
Crystals larger than 10 mm²

Material Properties:
Layered Structure: Facilitates exfoliation into thin layers for 2D material studies.
Semiconducting Properties: Exhibits a variable bandgap applicable to optoelectronic applications.
Optical Absorption: The material absorbs light in the visible and near-infrared ranges.

Crystal Structure:
Type: Layered orthorhombic structure
Features: Cleavable layers applicable for nanoscale applications and heterostructures.

Degree of Exfoliation:
Ease of Use: Exfoliated into monolayers or few-layer sheets for the listed applications.

Other Characteristics:
Variable Bandgap: Applicable to a range of optoelectronic applications.
Photovoltaic Potential: Used for solar energy conversion due to its optical properties.
Environmental behavior: Store under inert, controlled conditions.

Applications:
Optoelectronics:
Applicable for photodetectors, light-emitting devices, and other visible-to-infrared devices. Energy Applications: Applicable to photocatalysis and solar cells due to its optical absorption and bandgap.
2D Material Studies:
Applicable to exploring exfoliated layers and van der Waals heterostructures. Quantum Materials Research:
Permits studies of low-dimensional electronic and optical phenomena. Sensors:
Used for sensing devices.