Antimony Telluride (Sb₂Te₃)

Antimony Telluride (Sb₂Te₃)

CAS Number: 1327-50-0

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Morphology Options:
Thickness range: Minimum 5 nm, maximum 50 nm. For specific thickness requirements, please contact us directly.

Substrate Options:
Sb₂Te₃ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Antimony telluride (Sb₂Te₃) is a layered material with a rhombohedral crystal structure and has thermoelectric and topological insulating properties. Sb₂Te₃ exhibits metallic surface states due to its topological insulating nature, while the bulk remains semiconducting with a narrow bandgap of approximately 0.3 eV. As a thermoelectric material, Sb₂Te₃ converts heat into electricity and vice versa, supporting its use in thermoelectric devices. Its carrier mobility and surface state conductivity also support applications in spintronics and quantum computing.

Applications:
Thermoelectric Devices: Sb₂Te₃ is used in thermoelectric coolers and power-generation modules near room temperature.
Topological Insulators: Sb₂Te₃’s topologically protected surface states support use in quantum computing and spintronic devices.
Sensors: Sb₂Te₃-based devices are used for detecting gases and environmental changes.
Electronics: Its electronic properties support its use as a functional layer in electronic applications.
Energy Harvesting: Sb₂Te₃ is utilized in converting waste heat into usable electrical energy.