Tin Diselenide (SnSe₂)

Tin Diselenide (SnSe₂)

CAS Number: 20770-09-6

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
SnSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request; please visit Custom Products page or contact us for assistance.

Fundamental Properties:
Tin diselenide (SnSe₂) is a layered transition metal dichalcogenide (TMD) with a hexagonal crystal structure. It is a semiconducting material with an indirect bandgap of approximately 1.2 eV in its bulk form and a direct bandgap in monolayer form. SnSe₂ has electrical, optical, and thermal properties, stability under the stated environmental conditions, and ease of exfoliation. SnSe₂’s electronic structure and photoresponse can support use in optoelectronic devices, while its chemical and thermal stability support applications in energy storage and sensing technologies.

Applications:
Optoelectronics: SnSe₂’s direct bandgap in monolayer form can support use in photodetectors, solar cells, and light-emitting diodes (LEDs).
Electronics: Its semiconducting properties and carrier mobility supports applications in thin-film transistors (TFTs) and other electronic devices.
Sensors: SnSe₂-based sensors are used to detect gases, chemicals, and environmental changes. Energy Applications: SnSe₂ is used as a photocatalyst for water splitting and as an electrode material in batteries and supercapacitors.
Catalysis: SnSe₂ is used in catalytic reactions due to its chemical properties and layered structure.