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  • Indium Arsenide (InAs) Single Crystal Substrates, ⟨100⟩ Orientation, 2 pcs/pack

    Indium Arsenide (InAs) Single Crystal Substrates, ⟨100⟩ Orientation, 2 pcs/pack

    $372.65

    Indium Arsenide (InAs) Single Crystal Substrates, <100> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Indium Arsenide (InAs) Single Crystal Substrates, ⟨111⟩ Orientation, 2 pcs/pack

    Indium Arsenide (InAs) Single Crystal Substrates, ⟨111⟩ Orientation, 2 pcs/pack

    $372.65

    Indium Arsenide (InAs) Single Crystal Substrates, <111> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Indium Arsenide (InAs) Single Crystal Wafers, ⟨100⟩ Orientation

    Indium Arsenide (InAs) Single Crystal Wafers, ⟨100⟩ Orientation

    Price range: $1,893.32 through $2,539.74

    Indium Arsenide (InAs) Single Crystal Wafers, <100> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Indium Arsenide (InAs) Single Crystal Wafers, ⟨111⟩ Orientation

    Indium Arsenide (InAs) Single Crystal Wafers, ⟨111⟩ Orientation

    Price range: $1,893.32 through $2,539.74

    Indium Arsenide (InAs) Single Crystal Wafers, <111> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page