913–928/1232개 결과 표시
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…
Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular (Price Upon Request) Nanostore’s Silicon (Si) sputtering target is a 99.999% purity, intrinsic / n-type / p-type semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…
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