GaN

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Gallium Nitride (GaN) Single Crystal Substrates, ⟨0001⟩
Price range: ₹72,772.28 through ₹110,810.02
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…

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Gallium Nitride (GaN) Single Crystal Wafers, ⟨0001⟩
Price range: ₹155,187.39 through ₹158,357.20
Gallium Nitride (GaN) Single Crystal Wafers Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…

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GaN film on Sapphire Substrates
Price range: ₹9,904.34 through ₹20,866.61
GaN film on Sapphire Substrates Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…

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GaN film on Sapphire Wafers
Price range: ₹78,583.60 through ₹80,168.51
GaN film on Sapphire wafers Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…

Select options This product has multiple variants. The options may be chosen on the product page