Showing all 4 results

  • Gallium Nitride (GaN) Single Crystal Substrates, ⟨0001⟩

    Gallium Nitride (GaN) Single Crystal Substrates, ⟨0001⟩

    Price range: kr7,325.96 through kr11,155.20

    Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Gallium Nitride (GaN) Single Crystal Wafers, ⟨0001⟩

    Gallium Nitride (GaN) Single Crystal Wafers, ⟨0001⟩

    Price range: kr15,622.66 through kr15,941.76

    Gallium Nitride (GaN) Single Crystal Wafers Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • GaN film on Sapphire Substrates

    GaN film on Sapphire Substrates

    Price range: kr997.07 through kr2,100.63

    GaN film on Sapphire Substrates Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • GaN film on Sapphire Wafers

    GaN film on Sapphire Wafers

    Price range: kr7,910.98 through kr8,070.53

    GaN film on Sapphire wafers Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page