-
kr7,142.64 – kr10,876.07Price range: kr7,142.64 through kr10,876.07
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
-
kr15,231.74 – kr15,542.86Price range: kr15,231.74 through kr15,542.86
Gallium Nitride (GaN) Single Crystal Wafers Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
-
kr972.12 – kr2,048.07Price range: kr972.12 through kr2,048.07
GaN film on Sapphire Substrates Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…
-
kr7,713.03 – kr7,868.59Price range: kr7,713.03 through kr7,868.59
GaN film on Sapphire wafers Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…