Showing 369–384 of 1232 results
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Price upon request
Gallium Sulfide (GaS) Sputtering Target, 99.9% Purity, Circular (Price Upon Request) ZHC LAB’s Gallium Sulfide (GaS) sputtering target is a 99.9% purity chalcogenide semiconductor ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional…
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$1,216.78 – $1,754.18Price range: $1,216.78 through $1,754.18
Gallium Telluride (Ga₂Te₃) Sputtering Target, 99.99% Purity, Circular Nanostore’s Gallium Telluride (Ga₂Te₃) sputtering target is a 99.99% purity compound semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Key Features Source Material Supplied as 99.99% Purity for…
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$597.25 – $1,503.58Price range: $597.25 through $1,503.58
Gallium-Doped Zinc Oxide (GZO) Sputtering Target, Custom ZnO:Ga₂O₃ Composition, Circular Nanostore’s Gallium-Doped Zinc Oxide (GZO) sputtering target is a custom zno:ga2o3 composition transparent conductive oxide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling,…
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$104.40 – $219.96Price range: $104.40 through $219.96
GaN film on Sapphire Substrates Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…
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$828.35 – $845.06Price range: $828.35 through $845.06
GaN film on Sapphire wafers Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…
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$696.09 – $793.55Price range: $696.09 through $793.55
GaPS₄ Crystals GaPS₄ is a layered transition metal thiophosphate with a van der Waals structure, has its semiconducting properties, high optical absorption, and potential for 2D material studies. Its unique electronic and optical characteristics make it a promising candidate for optoelectronics, energy storage, and quantum materials research. Our GaPS₄ crystals are synthesized using the Chemical…
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$696.09 – $793.55Price range: $696.09 through $793.55
GaS Crystals GaS is a layered semiconductor belonging to the group-III metal chalcogenides, with a van der Waals structure that makes it applicable for 2D material research. GaS exhibits a wide bandgap and high photoconductivity, making it applicable to optoelectronic devices, energy applications, and nanoscale electronics. Our GaS crystals are grown using high-temperature vapor transport…
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Price upon request
Customisable gas diffusion / flow cell for CO2RR, O2RR, NRR, organic synthesis and electrolysis; pricing on request.
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$696.09 – $1,252.98Price range: $696.09 through $1,252.98
GaSe Crystals GaSe (Gallium Selenide) is a layered semiconductor material with a van der Waals structure, exhibiting a direct bandgap and pronounced nonlinear optical properties. Its unique crystallographic structure facilitates mechanical exfoliation, allowing the production of quality monolayer or few-layer two-dimensional (2D) materials. These characteristics make GaSe a promising candidate for applications in optoelectronics, photodetectors,…
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$696.09 – $1,252.98Price range: $696.09 through $1,252.98
GaTe Crystals GaTe is a layered semiconductor material with a van der Waals structure, known for its anisotropic optical and electronic properties. It exhibits a direct bandgap, photoluminescence, and environmental stability, supporting optoelectronic devices, quantum materials research, and 2D material studies. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm² Crystals…
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$696.09 – $1,531.42Price range: $696.09 through $1,531.42
GeBi₂Te₄ Crystals GeBi₂Te₄ is a layered topological insulator with a van der Waals structure, has its strong electronic, optical, and thermoelectric properties. Its consistent surface states, high thermoelectric efficiency, and anisotropic behavior make it a promising material for quantum materials research, energy harvesting, and spintronic applications. Our GeBi₂Te₄ crystals are synthesized using the Chemical Vapor…
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$696.09 – $793.55Price range: $696.09 through $793.55
GeBi₄Te₇ Crystals GeBi₄Te₇ is a layered chalcogenide material with a van der Waals structure, has its high thermoelectric, electronic, and optical properties. It is a promising candidate for energy conversion, quantum materials research, and spintronic applications due to its high thermoelectric efficiency, consistent surface states, and strong spin-orbit coupling. Our GeBi₄Te₇ crystals are synthesized using…
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$696.09
GePbS₃ Crystals GePbS₃ is a layered ternary chalcogenide material with unique optical, electronic, and thermal properties. Its wide bandgap and strong light absorption make it a promising candidate for optoelectronics, photovoltaics, and specialized 2D material research. Sample Size Options: Crystals larger than 10 mm² Material Properties: Layered Structure: Facilitates exfoliation into thin layers for 2D…
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Price upon request
Germanium (Ge) Granules, 99.999%-99.9999% Purity (Request Current Price) Nanostore Germanium (Ge) granules are evaporation source materials supplied for thin-film deposition research, PVD source loading, compound precursor studies, and laboratory materials development. The pellet and piece formats are convenient for weighing, loading, and small-batch experimental workflows where material identity, purity selection, and clean handling are important….
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$165.66 – $232.49Price range: $165.66 through $232.49
Germanium (Ge) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: 5.6575 Angstrom – Melting Point: 937.4 °C – Density: 5.323 g/cm³ – Growth Method: CZ Standard Specifications (by Product): Product 1: – Type/Doping: N-type/Sb-doped – Orientation: (111) ± 0.5° – Resistivity: 5~40 ohm-cm – Surface Finish: Single-Side Polished – Packaging:…
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$215.78 – $1,652.55Price range: $215.78 through $1,652.55
Germanium (Ge) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: 5.6575 Angstrom – Melting Point: 937.4 °C – Density: 5.323 g/cm³ – Growth Method: CZ Standard Specifications (by Product): Product 1: – Type/Doping: N-type/Sb-doped – Orientation: (111) ± 0.5° – Resistivity: 5~40 ohm-cm – Surface Finish: Single-Side Polished – Dislocation…
