Thermal SiO₂ on P-type (B-Doped) Si (100) Wafers

Thermal SiO₂ on P-Type (Boron-Doped) Si (100) Wafers

Overview
Our thermal silicon dioxide (SiO₂) wafers are fabricated using high-temperature thermal oxidation on P-type (boron-doped) Si (100) substrates. Available resistivity ranges include 1–10 Ω·cm and heavily doped 0.001–0.005 Ω·cm options.

Thermally grown SiO₂ has consistent film density, high dielectric strength, and a consistent Si/SiO₂ interface compared to deposited oxide films. These wafers are used in semiconductor device research, MOS capacitor structures, interface studies, and microfabrication applications.

Available Sizes
10 × 10 × 0.5 mm
2 inch diameter × 0.5 mm
3 inch diameter × 0.5 mm
4 inch diameter × 0.5 mm
6 inch diameter × 0.625 mm

Oxide Thickness Options
100 nm
280 nm
300 nm
500 nm

Polishing & Oxide Configuration Options
Single-side Polished + Single-side Oxide
Single-side Polished + Double-side Oxide
Double-side Polished + Single-side Oxide
Double-side Polished + Double-side Oxide

Substrate Specifications
Substrate Type: P-Type (Boron-Doped) Silicon
Crystal Orientation: Si (100)
Resistivity Options:
1–10 Ω·cm
0.001–0.005 Ω·cm

Thermal Oxide Characteristics
Quality thermally grown SiO₂
High dielectric strength
Low interface trap density
High thickness uniformity
Consistent and well-defined Si/SiO₂ interface

Applications
MOS capacitor fabrication
CMOS research
Gate oxide studies
Interface state density characterization
Semiconductor device prototyping
Electrical characterization experiments
MEMS processing

Quality & Packaging
Clean-room fits handling
Carefully packaged to prevent contamination
Research-grade wafer quality

Custom oxide thickness and wafer sizes available upon request.