LPCVD Si₃N₄ on Si (100) Wafers

LPCVD Silicon Nitride (Si₃N₄) on Si (100) Wafers

Overview
Our LPCVD silicon nitride (Si₃N₄) wafers are fabricated on quality Si (100) substrates using low-pressure chemical vapor deposition (LPCVD). LPCVD Si₃N₄ films has high density, high thickness uniformity, good dielectric strength, and consistent mechanical properties.

These wafers are used in MEMS fabrication, semiconductor processing, dielectric layer research, masking layers, and photonic device applications.

Layer Structure
Si₃N₄ (Silicon Nitride layer)
Si (100) substrate

Recommended Film Thickness
200 nm – Standard MEMS / dielectric layer
300 nm – Recommended for general microfabrication
500 nm – Thick nitride layer for mechanical support or masking

Substrate Specifications
Crystal Orientation: Si (100)
Type: N-type
Resistivity: 1–10 Ω·cm
Thickness: 500–525 µm
Surface Finish: Single-side polished (SSP)

Configuration
Single-side polished + Single-side Si₃N₄ (standard)

Double-side nitride available upon request.

Deposition Process
Low-Pressure Chemical Vapor Deposition (LPCVD)
High film density
Good mechanical behavior
Low pinhole density
High uniformity

Applications
MEMS fabrication
Hard masking layer
Dielectric isolation
Surface passivation
Photonic and microelectronic devices
Thin film mechanical structures

Quality & Packaging
Clean-room fits handling
Research-grade wafer quality
Carefully packaged to prevent contamination

Custom thickness and wafer sizes available upon request.