Indium Phosphide (InP) Single Crystal Substrates, 2 pcs/pack

Indium Phosphide (InP) Single Crystal Substrates, <100>

Physical Properties:
– Crystal Structure: Cubic System
– Lattice Constant: a=5.8687 Angstrom
– Density: 4.81 g/cm³
– Melting Point: 1062 °C
– Mohs Hardness: 3 (Mohs)
– Growth Method: LEC

Standard Specifications (by Type):

1. N-type/undoped
– Doping Concentration (n): < 3 x 10¹⁶ cm⁻³
– Mobility: > 1700 cm²/V·s
– Dislocation Density (EPD): < 50000 cm⁻²

2. N-type/S-doped
– Doping Concentration (n): 5 x 10¹⁷ < n < 5 x 10¹⁸ cm⁻³
– Mobility: > 1700 cm²/V·s
– Dislocation Density (EPD): < 50000 cm⁻²

3. P-type/Zn-doped
– Doping Concentration (n): 0.6 x 10¹⁸ < n < 6 x 10¹⁸ cm⁻³
– Mobility: > 50 cm²/V·s
– Dislocation Density (EPD): < 50000 cm⁻²

4. N-type/Fe-doped (semi-insulating)
– Carrier Concentration (n): 10⁷ ~ 10⁸ cm⁻³
– Mobility: > 1700 cm²/V·s
– Resistivity: > 10⁷ ohm.cm
– Dislocation Density (EPD): < 50000 cm⁻²