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Showing 49–64 of 183 results
GaPS₄ Crystals GaPS₄ is a layered transition metal thiophosphate with a van der Waals structure, has its semiconducting properties, high optical absorption, and potential for 2D material studies. Its unique electronic and optical characteristics make it a promising candidate for optoelectronics, energy storage, and quantum materials research. Our GaPS₄ crystals are synthesized using the Chemical…
GaS Crystals GaS is a layered semiconductor belonging to the group-III metal chalcogenides, with a van der Waals structure that makes it applicable for 2D material research. GaS exhibits a wide bandgap and high photoconductivity, making it applicable to optoelectronic devices, energy applications, and nanoscale electronics. Our GaS crystals are grown using high-temperature vapor transport…
GaSe Crystals GaSe (Gallium Selenide) is a layered semiconductor material with a van der Waals structure, exhibiting a direct bandgap and pronounced nonlinear optical properties. Its unique crystallographic structure facilitates mechanical exfoliation, allowing the production of quality monolayer or few-layer two-dimensional (2D) materials. These characteristics make GaSe a promising candidate for applications in optoelectronics, photodetectors,…
GaTe Crystals GaTe is a layered semiconductor material with a van der Waals structure, known for its anisotropic optical and electronic properties. It exhibits a direct bandgap, photoluminescence, and environmental stability, supporting optoelectronic devices, quantum materials research, and 2D material studies. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm² Crystals…
GeBi₂Te₄ Crystals GeBi₂Te₄ is a layered topological insulator with a van der Waals structure, has its strong electronic, optical, and thermoelectric properties. Its consistent surface states, high thermoelectric efficiency, and anisotropic behavior make it a promising material for quantum materials research, energy harvesting, and spintronic applications. Our GeBi₂Te₄ crystals are synthesized using the Chemical Vapor…
GeBi₄Te₇ Crystals GeBi₄Te₇ is a layered chalcogenide material with a van der Waals structure, has its high thermoelectric, electronic, and optical properties. It is a promising candidate for energy conversion, quantum materials research, and spintronic applications due to its high thermoelectric efficiency, consistent surface states, and strong spin-orbit coupling. Our GeBi₄Te₇ crystals are synthesized using…
GePbS₃ Crystals GePbS₃ is a layered ternary chalcogenide material with unique optical, electronic, and thermal properties. Its wide bandgap and strong light absorption make it a promising candidate for optoelectronics, photovoltaics, and specialized 2D material research. Sample Size Options: Crystals larger than 10 mm² Material Properties: Layered Structure: Facilitates exfoliation into thin layers for 2D…
GeS Crystals GeS is a layered semiconductor material belonging to the family of group-IV monochalcogenides. It exhibits strong anisotropic optical and electronic properties due to its unique orthorhombic crystal structure. With a narrow bandgap and high environmental behavior, GeS is a promising material for optoelectronics, photovoltaics, and 2D material research. Sample Size Options: Crystals larger…
GeS₂ Crystals GeS₂ is a layered chalcogenide material with optical and electronic properties, supporting applications in optoelectronics, photonics, and 2D material research. With its wide bandgap and semiconducting properties, GeS₂ has applications in energy conversion, sensing, and materials studies. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm² Material Properties: Layered…
GeSb₄Te₇ Crystals GeSb₄Te₇ is a layered chalcogenide material with a van der Waals structure, described for its phase-change properties and thermoelectric performance. It exhibits high electrical conductivity, strong optical absorption, and phase behavior, making it a promising material for non-volatile memory, energy conversion, and optoelectronics applications. Our GeSb₄Te₇ crystals are synthesized using the Chemical Vapor…
GeSe Crystals GeSe (Germanium Selenide) is a layered semiconductor material with an orthorhombic crystal structure. It is has its strong anisotropic electronic and optical properties, making it a promising candidate for applications in nanoelectronics, optoelectronics, thermoelectrics, and energy storage devices. Our GeSe crystals are synthesized using the Chemical Vapor Transport (CVT) method, with high purity,…
GeSe₂ Crystals GeSe₂ is a layered ternary chalcogenide material with a van der Waals structure, known for its electronic, optical, and thermal properties. With a wide bandgap and anisotropic behavior, GeSe₂ is a material for optoelectronic applications, energy storage, and 2D material research. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25…
HfS₂ Crystals HfS₂ is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, has its electronic, optical, and catalytic properties. As an indirect bandgap semiconductor, it exhibits high carrier mobility, strong optical absorption, and environmental behavior, making it a promising material for nanoelectronics, optoelectronics, and energy storage applications. Our HfS₂ crystals are…
HfS₃ Crystals HfS₃ is a layered transition metal trichalcogenide (TMT) with a quasi-one-dimensional (1D) structure. It exhibits unique anisotropic electronic and optical properties, making it a promising material for optoelectronics, 2D material studies, and energy storage applications. Our HfS₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method, with high purity, precise stoichiometry, and…
HfSe₂ Crystals HfSe₂ is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, has its strong electronic, optical, and catalytic properties. As an indirect bandgap semiconductor, HfSe₂ exhibits high carrier mobility, strong optical absorption, and high environmental behavior, making it a promising material for applications in nanoelectronics, optoelectronics, and energy storage. Our…
HfTe₂ Crystals HfTe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure, exhibiting semimetallic behavior, strong spin-orbit coupling, and high environmental behavior. It is a promising material for quantum research, optoelectronic devices, and energy-related applications. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm² Crystals larger than…
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