Showing 385–400 of 1232 results
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Price upon request
Germanium (Ge) Sputtering Target, 99.9999% Purity, Circular (Price Upon Request) Nanostore’s Germanium (Ge) sputtering target is a 99.9999% purity semiconductor material PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and consistent material…
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Price upon request
Germanium Antimony Telluride (GeSbTe) Sputtering Target, 99.99% Purity, Ge:Sb:Te = 1:2:4 at%, Circular (Price Upon Request) Nanostore’s Germanium Antimony Telluride (GeSbTe) sputtering target is a 99.99% purity, ge:sb:te = 1:2:4 at% phase-change chalcogenide PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development,…
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Price upon request
Germanium Antimony Telluride (GeSbTe) Sputtering Target, 99.99% Purity, Ge:Sb:Te = 2:2:5 at%, Circular (Price Upon Request) Nanostore’s Germanium Antimony Telluride (GeSbTe) sputtering target is a 99.99% purity, ge:sb:te = 2:2:5 at% phase-change chalcogenide PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development,…
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ر.س4,545.61 – ر.س6,241.14Price range: ر.س4,545.61 through ر.س6,241.14
Germanium Dioxide (GeO₂) Sputtering Target, 99.99% Purity, Circular Nanostore’s Germanium Dioxide (GeO₂) sputtering target is a 99.99% purity oxide glass and ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Key Features Source Material Supplied as 99.99%…
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ر.س4,992.90 – ر.س7,754.62Price range: ر.س4,992.90 through ر.س7,754.62
Germanium Diselenide (GeSe₂) Sputtering Target, 99.99% Purity, Circular Nanostore’s Germanium Diselenide (GeSe₂) sputtering target is a 99.99% purity chalcogenide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Key Features Source Material Supplied as 99.99% Purity for…
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ر.س6,953.67 – ر.س11,410.92Price range: ر.س6,953.67 through ر.س11,410.92
Germanium Disulfide (GeS₂) Sputtering Target, 99.99% Purity, Circular Nanostore’s Germanium Disulfide (GeS₂) sputtering target is a 99.99% purity chalcogenide compound PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Key Features Source Material Supplied as 99.99% Purity for…
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ر.س5,617.02 – ر.س8,560.78Price range: ر.س5,617.02 through ر.س8,560.78
Germanium Selenide (GeSe) Sputtering Target, 99.99% Purity, Circular Nanostore’s Germanium Selenide (GeSe) sputtering target is a 99.99% purity chalcogenide semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Key Features Source Material Supplied as 99.99% Purity for…
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ر.س2,007.53 – ر.س5,258.15Price range: ر.س2,007.53 through ر.س5,258.15
Germanium Selenide (GeSe₂) Evaporation Pellets, 99.99% Purity Nanostore Germanium Selenide (GeSe₂) evaporation pellets are compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity are important….
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ر.س6,953.67 – ر.س12,035.04Price range: ر.س6,953.67 through ر.س12,035.04
Germanium Sulfide (GeS) Sputtering Target, 99.99% Purity, Circular Nanostore’s Germanium Sulfide (GeS) sputtering target is a 99.99% purity chalcogenide semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Key Features Source Material Supplied as 99.99% Purity for…
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ر.س3,167.35 – ر.س14,978.80Price range: ر.س3,167.35 through ر.س14,978.80
Germanium Telluride (GeTe) Evaporation Pellets, 99.99% Purity Nanostore Germanium Telluride (GeTe) evaporation pellets are compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity are important….
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ر.س4,103.53 – ر.س8,409.95Price range: ر.س4,103.53 through ر.س8,409.95
Germanium Telluride (GeTe) Sputtering Target, 99.99% Purity, Circular ZHC LAB’s Germanium Telluride (GeTe) sputtering target is a 99.99% purity chalcogenide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and specified material…
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ر.س2,600.44 – ر.س2,860.49Price range: ر.س2,600.44 through ر.س2,860.49
GeS Crystals GeS is a layered semiconductor material belonging to the family of group-IV monochalcogenides. It exhibits strong anisotropic optical and electronic properties due to its unique orthorhombic crystal structure. With a narrow bandgap and high environmental behavior, GeS is a promising material for optoelectronics, photovoltaics, and 2D material research. Sample Size Options: Crystals larger…
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ر.س2,600.44 – ر.س3,120.54Price range: ر.س2,600.44 through ر.س3,120.54
GeS₂ Crystals GeS₂ is a layered chalcogenide material with optical and electronic properties, supporting applications in optoelectronics, photonics, and 2D material research. With its wide bandgap and semiconducting properties, GeS₂ has applications in energy conversion, sensing, and materials studies. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm² Material Properties: Layered…
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ر.س2,600.44 – ر.س2,964.51Price range: ر.س2,600.44 through ر.س2,964.51
GeSb₄Te₇ Crystals GeSb₄Te₇ is a layered chalcogenide material with a van der Waals structure, described for its phase-change properties and thermoelectric performance. It exhibits high electrical conductivity, strong optical absorption, and phase behavior, making it a promising material for non-volatile memory, energy conversion, and optoelectronics applications. Our GeSb₄Te₇ crystals are synthesized using the Chemical Vapor…
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ر.س2,600.44 – ر.س5,200.94Price range: ر.س2,600.44 through ر.س5,200.94
GeSe Crystals GeSe (Germanium Selenide) is a layered semiconductor material with an orthorhombic crystal structure. It is has its strong anisotropic electronic and optical properties, making it a promising candidate for applications in nanoelectronics, optoelectronics, thermoelectrics, and energy storage devices. Our GeSe crystals are synthesized using the Chemical Vapor Transport (CVT) method, with high purity,…
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ر.س2,600.44 – ر.س2,964.51Price range: ر.س2,600.44 through ر.س2,964.51
GeSe₂ Crystals GeSe₂ is a layered ternary chalcogenide material with a van der Waals structure, known for its electronic, optical, and thermal properties. With a wide bandgap and anisotropic behavior, GeSe₂ is a material for optoelectronic applications, energy storage, and 2D material research. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25…
