Si - Nanostore

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Silicon (Si) Single Crystal Substrates (N-type, doped), 10 pcs/pack
Price range: ر.س494.04 through ر.س806.10
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Single Crystal Substrates (P-type, doped), 5 pcs/pack
Price range: ر.س494.04 through ر.س806.10
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Single Crystal Substrates (Undoped), 10 pcs/pack
Price range: ر.س494.04 through ر.س806.10
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Single Crystal Wafers (N-type, doped)
Price range: ر.س181.98 through ر.س993.34
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Single Crystal Wafers (P-type, doped)
Price range: ر.س181.98 through ر.س837.31
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Single Crystal Wafers (Undoped)
Price range: ر.س181.98 through ر.س993.34
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page