Aluminum Nitride (AlN) Film on Sapphire Wafer Template
Price range: €658.85 through €1,290.21
Aluminum Nitride (AlN) Film on Sapphire Wafer Template
Application:
Designed as a template for the epitaxial growth of AlGaN-based deep UV LEDs, HEMTs, and other wide bandgap optoelectronic devices. This template replaces the nucleation step.
Product Overview:
This product consists of an epitaxial Aluminum Nitride (AlN) thin film grown on a C-plane Sapphire substrate. It has the stated dislocation-density and surface-roughness specifications and provides a lattice-matched foundation for further III-Nitride device fabrication.
Specifications:
– Substrate Material: Sapphire (Al₂O₃), C-plane
– AlN Epilayer Structure: Wurtzite
– Crystal Orientation: C-axis (0001) ± 0.2°
– Effective Area: > 95%
– Cracks: None
– Surface Roughness (AFM 5×5μm): Ra <= 2 nm
Crystal Quality (HRXRD FWHM):
– (0002) Peak: < 100 arcsec
– (10-12) Peak: < 350 arcsec
Geometric Parameters (By Diameter): 1. 2 inch Wafer:
– Substrate Thickness: 430 ± 15 μm
– Total Thickness Variation (TTV): <= 10 μm
– Warp: <= 20 μm
– Bow: <= 20 μm
2. 4 inch Wafer:
– Substrate Thickness: 650 ± 20 μm
– Total Thickness Variation (TTV): <= 20 μm
– Warp: <= 40 μm
– Bow: <= 40 μm
3. 6 inch Wafer:
– Substrate Thickness: 1300 ± 20 μm
– Total Thickness Variation (TTV): <= 20 μm
– Warp: <= 60 μm
– Bow: <= 60 μm
Customization & Special Requests:
– Custom AlN layer thicknesses are available upon request.
– Other substrate thicknesses can be discussed.
– For any non-standard specifications, please contact us for a quote.
| Option 1 | 2″ Sapphire (C-plane) + 1000 nm AlN, 2″ Sapphire (C-plane) + 200 nm AlN, 2″ Sapphire (C-plane) + 400 nm AlN, 2″ Sapphire (C-plane) + 600 nm AlN, 2″ Sapphire (C-plane) + 800 nm AlN, 4″ Sapphire (C-plane) + 1000 nm AlN, 4″ Sapphire (C-plane) + 200 nm AlN, 4″ Sapphire (C-plane) + 400 nm AlN, 4″ Sapphire (C-plane) + 600 nm AlN, 4″ Sapphire (C-plane) + 800 nm AlN |
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