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LPCVD Si₃N₄ on Silicon Substrates (Si (100)) Overview Our LPCVD silicon nitride (Si₃N₄) substrates are precision-cut from research-grade Si (100) wafers coated with high-density LPCVD silicon nitride films. LPCVD Si₃N₄ has high film uniformity, high dielectric strength, good mechanical behavior, and low defect density, making these substrates applicable to MEMS research, dielectric studies, and microfabrication…
LPCVD Silicon Nitride (Si₃N₄) on Si (100) Wafers Overview Our LPCVD silicon nitride (Si₃N₄) wafers are fabricated on quality Si (100) substrates using low-pressure chemical vapor deposition (LPCVD). LPCVD Si₃N₄ films has high density, high thickness uniformity, good dielectric strength, and consistent mechanical properties. These wafers are used in MEMS fabrication, semiconductor processing, dielectric layer…
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