Showing 513–528 of 1232 results
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Price upon request
Indium (In) Pellets And Ingots, 99.995%-99.99995% Purity (Request Current Price) Nanostore Indium (In) pellets and ingots are source materials supplied for thin-film deposition research, evaporation source loading, alloy preparation, and laboratory materials development. The pellet and piece formats are convenient for weighing, loading, and small-batch experimental workflows where material identity, purity selection, and clean handling…
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Price upon request
Indium (In) Sputtering Target, 99.995% Purity, Circular (Price Upon Request) ZHC LAB’s Indium (In) sputtering target is a 99.995% purity soft post-transition metal PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and…
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Price upon request
Indium (In) Wire, 99.995%-99.9999% Purity (Request Current Price) Nanostore Indium (In) wire is a thin-film and materials-research source format supplied for PVD source loading, evaporation-related workflows, filament or wire studies, alloy preparation, and laboratory materials development. The wire and rod formats support cutting, weighing, fixture loading, and small-batch experimental work where material identity, purity, and…
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Price upon request
Indium Antimonide (InSb) Evaporation Pellets, 99.99% Purity (Request Current Price) Nanostore Indium Antimonide (InSb) evaporation pellets are compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material…
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$432.97
Indium Antimonide (InSb) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.48 Angstrom – Density: 5.775 g/cm³ – Melting Point: 527 °C Standard Specifications: – Type/Doping: N-type – Orientation: (111) – Dimensions: dia 2 inch x 0.5 mm – Surface Finish: Double-Side Polished In face CMP
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$1,669.25
Indium Antimonide (InSb) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.48 Angstrom – Density: 5.775 g/cm³ – Melting Point: 527 °C Standard Specifications: – Type/Doping: N-type – Orientation: (111) – Dimensions: dia 2 inch x 0.5 mm – Surface Finish: Double-Side Polished In face CMP
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Price upon request
Indium Antimonide (InSb) Sputtering Target, 99.99% Purity, Circular (Price Upon Request) Nanostore’s Indium Antimonide (InSb) sputtering target is a 99.99% purity III-V compound semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work. Pricing is provided upon request…
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$293.74
Indium Arsenide (InAs) Single Crystal Substrates, <100> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…
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$293.74
Indium Arsenide (InAs) Single Crystal Substrates, <111> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…
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$1,492.44 – $2,001.99Price range: $1,492.44 through $2,001.99
Indium Arsenide (InAs) Single Crystal Wafers, <100> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…
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$1,492.44 – $2,001.99Price range: $1,492.44 through $2,001.99
Indium Arsenide (InAs) Single Crystal Wafers, <111> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…
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$382.85 – $740.64Price range: $382.85 through $740.64
Porous Indium Foam Applications: Electrode substrate for batteries, catalyst support, thermal dissipation material, acoustic damping and shielding material, filtration media, and scientific research materials. Packaging: 200 mm x 100 mm x 2 mm sheets; 200 mm x 300 mm x 2 mm sheets. Description: This indium foam features a highly porous, open-cell metallic network with…
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$183.76
Indium Foil Application: Indium Source Precursor, Electronic Heat Dissipation/Cooling Material, Semiconductor Applications Product Overview: This indium foil is characterized by its low melting point, low electrical resistance, thermal and electrical conductivity. It is used in the electronics and wireless communications industries. Key Specifications: Purity: > 99.99% Melting Point: 156 ± 1°C Thermal Conductivity: 84 W/(m-K)…
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Price upon request
Indium Gallium Selenide (InGaSe) Sputtering Target, 99.99% Purity, Custom Composition, Circular (Price Upon Request) Nanostore’s Indium Gallium Selenide (InGaSe) sputtering target is a 99.99% purity, custom composition custom indium gallium chalcogenide PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch…
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Price upon request
Indium Gallium Zinc Oxide (IGZO) Sputtering Target, 99.99% Purity, In₂O₃:Ga₂O₃:ZnO = 1:1:1 mol%, Circular (Price Upon Request) Nanostore’s Indium Gallium Zinc Oxide (IGZO) sputtering target is a 99.99% purity, in2o3:ga2o3:zno = 1:1:1 mol% transparent oxide semiconductor ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target…
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Price upon request
Indium Gallium Zinc Oxide (IGZO) Sputtering Target, 99.99% Purity, In₂O₃:Ga₂O₃:ZnO = 1:1:2 mol%, Circular (Price Upon Request) Nanostore’s Indium Gallium Zinc Oxide (IGZO) sputtering target is a 99.99% purity, in2o3:ga2o3:zno = 1:1:2 mol% transparent oxide semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats…
