Showing 49–64 of 208 results
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$383.24 – $422.10Price range: $383.24 through $422.10
Product Description: Overview: These Fluorine-doped Tin Oxide (FTO) coated glass substrates are designed for electrochemical and optoelectronic research. They are used for dye-sensitized solar cells (DSSC) and perovskite research. Key Specifications: – Substrate Material: Standard Float Glass – Conductive Layer: Fluorine-doped Tin Oxide (FTO) – Sheet Resistance: 7; 8; 13; 14 Ω/sq – Thickness (T):…
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$61.80 – $298.47Price range: $61.80 through $298.47 Original price was: $61.80 – $298.47Price range: $61.80 through $298.47.$56.50 – $268.44Price range: $56.50 through $268.44Current price is: $56.50 – $268.44Price range: $56.50 through $268.44. Hot
Product Description: Overview: These Fluorine-doped Tin Oxide (FTO) coated glass substrates are designed for electrochemical and optoelectronic research. They are used for dye-sensitized solar cells (DSSC) and perovskite research. Key Specifications: – Substrate Material: Standard Float Glass – Conductive Layer: Fluorine-doped Tin Oxide (FTO) – Sheet Resistance: 7 Ω/sq – Thickness (T): 2.2 mm –…
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$217.22 – $294.93Price range: $217.22 through $294.93
Product Description: Overview: Fused Quartz Substrates designed for high-temperature and laboratory research. These substrates offer thermal stability and chemical resistance, and they are used for specialized optical, electrochemical, and material science applications. Key Specifications: – Precision: ±0.05 mm – Processing Services: CNC/Laser cutting, hole drilling, edge grinding, beveling, slotting, scribing, and specialized coating. – Surface…
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$634.04 – $7,840.04Price range: $634.04 through $7,840.04
Ga₂O₃ Single Crystal Substrate Key Specifications (Single-Sided Reference): – Thickness: 0.5–0.8 mm – Material: Gallium Oxide (Ga₂O₃) Single Crystal – FWHM (arcsec): ≤ 150 arcsec – Surface Type: Single-Sided Polished (SSP), Double-Sided Polished (DSP), Lapping – Crystal Orientations: <100>, <001>, <-201>, <010> – Doping Types & Concentrations: 1. UID (Unintentionally Doped): ≤ 5E17 cm⁻³ 2….
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$203.09 – $655.23Price range: $203.09 through $655.23
Gadolinium Gallium Garnet (Gd₃Ga₅O₁₂, GGG) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.376Angstrom – 2 theta: 51°07′ – Density: 7.09 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 6.5 (Mohs) – Growth Method: CZ Standard Specifications: – Orientation: (111) miscut < 0.3° (Available <0.1°) (110) miscut < 0.3° (Available…
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$2,096.43 – $2,329.57Price range: $2,096.43 through $2,329.57
Gadolinium Gallium Garnet (Gd₃Ga₅O₁₂, GGG) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.376Angstrom – 2 theta: 51°07′ – Density: 7.09 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 6.5 (Mohs) – Growth Method: CZ Standard Specifications: – Orientation: (111) miscut < 0.3° (Available <0.1°) (110) miscut < 0.3° (Available…
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$531.60 – $634.04Price range: $531.60 through $634.04
Gadolinium Scandate (GdScO₃) Single Crystal Substrate Physical Properties: – Crystal Structure: Orthorhombic System – Lattice Constant: a=5.45Angstrom , b=5.75Angstrom , c=7.93Angstrom – Melting Point: 2127°C – Density: 6.6 g/cm³ – Growth Method: CZ Standard Specifications: – Orientation: (110) miscut < 0.3° (Available < 0.1°) (001) miscut < 0.3° (Available < 0.1°) (100) miscut < 0.3°…
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$549.26 – $803.59Price range: $549.26 through $803.59
Gadolinium Scandium Gallium Garnet GSGG (Gd₃Sc₂Ga₃O₁₂) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 6.44 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
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$2,117.63 – $2,329.57Price range: $2,117.63 through $2,329.57
Gadolinium Scandium Gallium Garnet GSGG (Gd₃Sc₂Ga₃O₁₂) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 6.44 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
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$273.74 – $570.46Price range: $273.74 through $570.46
Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° / 16 ±…
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$591.65 – $1,312.25Price range: $591.65 through $1,312.25
Gallium Arsenide (GaAs) Single Crystal Wafers – N-type / P-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° /…
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$973.15 – $1,481.80Price range: $973.15 through $1,481.80
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
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$2,075.24 – $2,117.63Price range: $2,075.24 through $2,117.63
Gallium Nitride (GaN) Single Crystal Wafers Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
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$132.45 – $279.04Price range: $132.45 through $279.04
GaN film on Sapphire Substrates Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…
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$1,050.86 – $1,072.05Price range: $1,050.86 through $1,072.05
GaN film on Sapphire wafers Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…
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$210.16 – $294.93Price range: $210.16 through $294.93
Germanium (Ge) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: 5.6575 Angstrom – Melting Point: 937.4 °C – Density: 5.323 g/cm³ – Growth Method: CZ Standard Specifications (by Product): Product 1: – Type/Doping: N-type/Sb-doped – Orientation: (111) ± 0.5° – Resistivity: 5~40 ohm-cm – Surface Finish: Single-Side Polished – Packaging:…