Aluminum Oxide (Al₂O₃) Thin Film on Si (100) Substrates (10 × 10 mm)

Aluminum Oxide (Al₂O₃) Thin Film on Si (100) Substrates – 10 × 10 mm

Overview
Our aluminum oxide (Al₂O₃) thin film substrates are precision-cut from research-grade Al₂O₃-coated Si (100) wafers. These substrates has quality dielectric and surface passivation layers applicable to semiconductor research, interface engineering, and thin film device development.

Al₂O₃ thin films has high electrical insulation, chemical behavior, and consistent surface protection. The compact 10 × 10 mm format is applicable for laboratory-scale experiments, surface analysis, and device prototyping.

Layer Structure
Al₂O₃ (Aluminum Oxide layer)
Si (100) substrate

Available Film Thickness
20 nm – * Most available for interface engineering and passivation
50 nm – * General dielectric and insulation applications

Substrate Specifications
Size: 10 × 10 mm
Thickness: 0.5 mm
Crystal Orientation: Si (100)
Type: N-type
Resistivity: 1–10 Ω·cm
Surface Finish: Single-side polished
Configuration: Single-side Al₂O₃ coating

Film Characteristics
Uniform thickness control
Consistent dielectric performance
High chemical resistance
Research-grade surface quality

Applications
Surface passivation studies
MOS capacitor structures
Interface engineering research
Thin film deposition platforms
Catalyst support substrates
Protective dielectric layer experiments

Quality & Packaging
Clean-room fits handling
Individually packaged to prevent contamination
Research-grade substrate quality

Custom thickness and sizes available upon request.