Showing 33–48 of 208 results
Cobalt-Doped Magnesium Aluminate (Co2+:MgAl₂O₄) Crystal Key Specifications (Single-Sided Reference): – Chemical Formula: Co2+:MgAl₂O₄ – Crystal Structure: Cubic – Lattice Constant: 8.07 Angstrom – Density: 3.62 g/cm³ – Melting Point: 2105°C – Dimensions: Customizable specifications available
Cobalt Oxide (Co₃O₄) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Melting Point: 895 °C – Density: 6.07 g/cm³ – Color: Black – Water Solubility: Insoluble Standard Specifications: – Orientation: (001) miscut < 0.5°, (100) miscut < 0.5° – Edge orientation: Available – Dimensions: 5 × 5 × 0.5mm, 10 × 10…
Cobalt Oxide (CoO) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=4.26 Angstrom – Melting Point: 1933 °C – Density: 6.1 g/cm³ – Color: Black Standard Specifications: – Orientation: (001) miscut < 0.5°, (100) miscut < 0.5° – Edge orientation: Available – Dimensions: 5 × 5 × 0.5mm, 10 ×…
Copper (Cu) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=3.615Angstrom – Density: 8.93 g/cm³ – Melting Point: 1084.62 °C – Boiling Point: 2567 °C – Mohs Hardness: 3 (Mohs) – Purity: 99.999% – Growth Method: Czochralski or Bridgman Method Standard Specifications: – Orientation: (100) miscut <= 2.0°, (110) miscut…
Copper-Coated Silicon substrates (Cu/Ti on Si (100)) Overview Our copper-coated silicon substrates are precision-cut from research-grade Cu thin film wafers fabricated on Si (100) substrates using high-vacuum magnetron sputtering. A 10 nm titanium (Ti) adhesion layer is deposited between the silicon substrate and the copper film to ensure strong interfacial bonding and consistent electrical performance….
Copper-Coated Silicon Wafers (Cu/Ti on Si (100)) Overview Our copper-coated silicon wafers are fabricated using high-vacuum magnetron sputtering to ensure uniform thickness, strong adhesion, and clean surface morphology applicable to electrochemical research and microfabrication. A titanium (Ti) adhesion layer is deposited between the silicon substrate and the copper film to enhance interfacial bonding and long-term…
Cuprous Oxide (Cu₂O) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=4.27 Angstrom – Melting Point: 1232 °C – Density: 6.0 g/cm³ – Mohs Hardness: 3.5~4 (Mohs) – Color: dark red to conchoidal red – Growth Method: Natural Standard Specifications: – Orientation: (001), (110), (111) – Dimensions: 4 × 4…
Diamond Single Crystal Substrate Physical Properties: – Preparation Method: CVD – Nitrogen Content: < 50 ppm – Hardness (Microhardness): 80~150 GPa – Young’s Modulus: 1150~1300 GPa – Friction Coefficient: 0.05~0.10 – Thermal Expansion Coefficient: 1.0 x 10⁻⁶ /K – Thermal Conductivity: 1500~2000 w/(m.K) – Optical Refractive Index: 1064 nm: 2.392 , 600 nm: 2.415 –…
transparent Indium Tin Oxide (ITO) conductive glass substrates tailored for laboratory applications in electrochemistry, optoelectronics, electrode fabrication, electrodeposition, and solar energy research. Key Specifications: – Substrate Material: Standard Float Glass – Conductive Layer: Indium Tin Oxide (ITO) on both sides – Resistance Options: 7-10 Ω/sq, or 3-5 Ω/sq – Transmittance: ≥ 83% – Thermal Stability:…
Dysprosium Scandate (DyScO₃) Single Crystal Substrate Physical Properties: – Crystal Structure: Orthorhombic System – Lattice Constant: a=5.44Angstrom , b=5.71Angstrom , c=7.89Angstrom – Density: 6.9 g/cm³ – Melting Point: 2127 °C – Growth Method: Czochralski (CZ) Standard Specifications: – Orientation: (110) miscut < 0.3°, (001) miscut < 0.3°, (100) miscut < 0.3°, (010) miscut < 0.3°,…
The elastic membrane storage box is designed with two transparent elastic membranes. It is applicable to suspending and securing fragile items such as crystals, prisms, optical components, gemstones, watches, and other delicate products. By holding the item between the elastic membranes, the box limits movement and mechanical damage during transportation and storage. The transparent structure…
V2.0 Electric Vacuum Suction Pen & Pick-and-Place Station Application: A system for small component assembly and handling of crystals, chips, wafers, optical parts, electronic components, and optoelectronic devices. The system replaces manual tweezers for delicate operations. Features: * Continuous & Stable Suction: Built-in low-noise vacuum pump provides continuous suction without the need for manual squeezing….
Product Description: Overview: Electronic-grade glass substrates with a choice of optical glass compositions, intended for laboratory research. The listed properties include mechanical strength, chemical compatibility, and visible-light transmittance relative to soda-lime glass. Specifications: – Material Classification: Electronic-Grade Glass (material selected per order) – Grade: Electronic-Grade – Dimensional Precision: ±0.05 mm – Standard Thickness (T) Range:…
Fe doped SrTiO₃ Single Crystal Substrate Physical Properties: – Fe Doping Concentration: 0.5% wt, 0.05% wt, 0.01% wt, 0.005% wt – Crystal Structure: Cubic System – Lattice Constant: a=3.905 Angstrom – Melting Point: 2080 °C – Density: 5.175 g/cm³ – Mohs Hardness: 6 (Mohs) – Growth Method: Verneuil method Standard Specifications: – Orientation: (100) miscut…
[KMg₃(AlSi₃O₁₀)F₂] Fluorophlogopite Mica Disc Physical Properties: – Formula: KMg₃(AlSi₃O₁₀)F₂ – Melting Point: 1375 °C – Long-term Operating Temperature: 1100 °C – Preparation Method: Platinum Crucible Melting Method
[KMg₃(AlSi₃O₁₀)F₂] Fluorophlogopite Mica Substrate Physical Properties: – Formula: KMg₃(AlSi₃O₁₀)F₂ – Melting Point: 1375 °C – Long-term Operating Temperature: 1100 °C – Preparation Method: Platinum Crucible Melting Method
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