Indium Phosphide (InP) Single Crystal Wafers
InP

Indium Phosphide (InP) Single Crystal Wafers

価格帯: ¥204,397 – ¥465,994

※日本円による参考価格（日本の消費税は含まれません）

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Indium Phosphide (InP) Single Crystal Wafers, <100>

物理的特性:
– 結晶構造: Cubic System
– 格子定数: a=5.8687 Angstrom
– 密度: 4.81 g/cm³
– 融点: 1062 °C
– モース硬度: 3 (Mohs)
– 育成方法: LEC

標準仕様（タイプ別）:

1. N-type/undoped
– ドーピング濃度 (n): < 3 x 10¹⁶ cm⁻³
– 移動度: > 1700 cm²/V·s
– 転位密度 (EPD): < 50000 cm⁻²

2. N-type/S-doped
– ドーピング濃度 (n): 5 x 10¹⁷ < n < 5 x 10¹⁸ cm⁻³
– 移動度: > 1700 cm²/V·s
– 転位密度 (EPD): < 50000 cm⁻²

3. P-type/Zn-doped
– ドーピング濃度 (n): 0.6 x 10¹⁸ < n < 6 x 10¹⁸ cm⁻³
– 移動度: > 50 cm²/V·s
– 転位密度 (EPD): < 50000 cm⁻²

4. N-type/Fe-doped (semi-insulating)
– キャリア濃度 (n): 10⁷ ~ 10⁸ cm⁻³
– 移動度: > 1700 cm²/V·s
– 抵抗率: > 10⁷ ohm.cm
– 転位密度 (EPD): < 50000 cm⁻²

オプション1

2″ dia × 0.5 mm, N-type (Fe-doped), Double-Side Polished, 2″ dia × 0.5 mm, N-type (S-doped), Single-Side Polished, 2″ dia × 0.5 mm, N-type (un-doped), Single-Side Polished, 2″ dia × 0.5 mm, P-type (Zn-doped), Double-Side Polished, 3″ dia × 0.6 mm, N-type (Fe-doped), Double-Side Polished, 3″ dia × 0.6 mm, N-type (S-doped), Single-Side Polished, 3″ dia × 0.6 mm, N-type (un-doped), Single-Side Polished, 3″ dia × 0.6 mm, P-type (Zn-doped), Double-Side Polished, 4″ dia × 0.65 mm, N-type (Fe-doped), Double-Side Polished, 4″ dia × 0.65 mm, N-type (S-doped), Single-Side Polished, 4″ dia × 0.65 mm, N-type (un-doped), Single-Side Polished, 4″ dia × 0.65 mm, P-type (Zn-doped), Double-Side Polished

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