Gallium Nitride (GaN) Single Crystal Substrates, ⟨0001⟩
GaN

Gallium Nitride (GaN) Single Crystal Substrates, ⟨0001⟩

価格帯: ¥118,925 – ¥181,087

※日本円による参考価格（日本の消費税は含まれません）

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Gallium Nitride (GaN) Single Crystal Substrate

物理的特性:
– 結晶構造: Hexagonal System
– 格子定数: a=3.186Angstrom, c=5.186Angstrom
– 作製方法: HVPE

標準仕様:
– 結晶方位: C-plane (0001) off angle toward M-axis 0.35° ± 0.15°
– プライマリフラット: (10-10) ± 2.0° / 16 ± 1 mm
– セカンダリフラット: (11-20) ± 3.0° / 8 ± 1 mm
– 寸法: 5 x 5 x 0.4 mm, 10 x 10 x 0.4mm
– 表面仕上げ: Single-Side Polished / Double-Side Polished
– 表面粗さ: Ra: < 0.5 nm – 面積: > 90%

タイプ別電気的仕様:
1. N-type/undoped:
– 抵抗率: < 0.1 ohm-cm

2. N-type/Si-doped:
– 抵抗率: < 0.05 ohm-cm 3. Semi-Insulating/Fe-doped: – 抵抗率: > 1 x 10⁶ ohm-cm

4. Semi-Insulating/C-doped:
– 抵抗率: > 1 x 10⁸ ohm-cm

オプション1

10 × 10 × 0.4 mm, N-type (Si-doped), Double-Side Polished, 10 × 10 × 0.4 mm, N-type (Si-doped), Single-Side Polished, 10 × 10 × 0.4 mm, N-type (undoped), Double-Side Polished, 10 × 10 × 0.4 mm, N-type (undoped), Single-Side Polished, 10 × 10 × 0.4 mm, Semi-Insulating (C-doped), Double-Side Polished, 10 × 10 × 0.4 mm, Semi-Insulating (C-doped), Single-Side Polished, 10 × 10 × 0.4 mm, Semi-Insulating (Fe-doped), Double-Side Polished, 10 × 10 × 0.4 mm, Semi-Insulating (Fe-doped), Single-Side Polished, 5 × 5 × 0.4 mm, N-type (Si-doped), Double-Side Polished, 5 × 5 × 0.4 mm, N-type (Si-doped), Single-Side Polished, 5 × 5 × 0.4 mm, N-type (undoped), Double-Side Polished, 5 × 5 × 0.4 mm, N-type (undoped), Single-Side Polished, 5 × 5 × 0.4 mm, Semi-Insulating (C-doped), Double-Side Polished, 5 × 5 × 0.4 mm, Semi-Insulating (C-doped), Single-Side Polished, 5 × 5 × 0.4 mm, Semi-Insulating (Fe-doped), Double-Side Polished, 5 × 5 × 0.4 mm, Semi-Insulating (Fe-doped), Single-Side Polished

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