Copper (Cu) Single Crystal Substrates
物理的特性:
– 結晶構造: Cubic System
– 格子定数: a=3.615Angstrom
– 密度: 8.93 g/cm³
– 融点: 1084.62 °C
– 沸点: 2567 °C
– モース硬度: 3 (Mohs)
– 純度: 99.999%
– 育成方法: Czochralski or Bridgman Method
標準仕様:
– 方位: (100) miscut <= 2.0°, (110) miscut <= 2.0°, (111) miscut <= 2.0°
– エッジ方位: Available
– 寸法: 10 x 10 x 1.0mm (Customizable other sizes)
– 表面仕上げ: Single-Side Polished / Double-Side Polished
– 表面粗さ: Ra: < 100Angstrom
| オプション1 | 10 × 10 × 1.0 mm, (100), Double-Side Polished, 10 × 10 × 1.0 mm, (100), Single-Side Polished, 10 × 10 × 1.0 mm, (110), Double-Side Polished, 10 × 10 × 1.0 mm, (110), Single-Side Polished, 10 × 10 × 1.0 mm, (111), Double-Side Polished, 10 × 10 × 1.0 mm, (111), Single-Side Polished |
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