Showing 49–64 of 208 results
Product Description: Overview: These Fluorine-doped Tin Oxide (FTO) coated glass substrates are designed for electrochemical and optoelectronic research. They are used for dye-sensitized solar cells (DSSC) and perovskite research. Key Specifications: – Substrate Material: Standard Float Glass – Conductive Layer: Fluorine-doped Tin Oxide (FTO) – Sheet Resistance: 7; 8; 13; 14 Ω/sq – Thickness (T):…
Product Description: Overview: These Fluorine-doped Tin Oxide (FTO) coated glass substrates are designed for electrochemical and optoelectronic research. They are used for dye-sensitized solar cells (DSSC) and perovskite research. Key Specifications: – Substrate Material: Standard Float Glass – Conductive Layer: Fluorine-doped Tin Oxide (FTO) – Sheet Resistance: 7 Ω/sq – Thickness (T): 2.2 mm –…
Product Description: Overview: Fused Quartz Substrates designed for high-temperature and laboratory research. These substrates offer thermal stability and chemical resistance, and they are used for specialized optical, electrochemical, and material science applications. Key Specifications: – Precision: ±0.05 mm – Processing Services: CNC/Laser cutting, hole drilling, edge grinding, beveling, slotting, scribing, and specialized coating. – Surface…
Ga₂O₃ Single Crystal Substrate Key Specifications (Single-Sided Reference): – Thickness: 0.5–0.8 mm – Material: Gallium Oxide (Ga₂O₃) Single Crystal – FWHM (arcsec): ≤ 150 arcsec – Surface Type: Single-Sided Polished (SSP), Double-Sided Polished (DSP), Lapping – Crystal Orientations: <100>, <001>, <-201>, <010> – Doping Types & Concentrations: 1. UID (Unintentionally Doped): ≤ 5E17 cm⁻³ 2….
Gadolinium Gallium Garnet (Gd₃Ga₅O₁₂, GGG) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.376Angstrom – 2 theta: 51°07′ – Density: 7.09 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 6.5 (Mohs) – Growth Method: CZ Standard Specifications: – Orientation: (111) miscut < 0.3° (Available <0.1°) (110) miscut < 0.3° (Available…
Gadolinium Gallium Garnet (Gd₃Ga₅O₁₂, GGG) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.376Angstrom – 2 theta: 51°07′ – Density: 7.09 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 6.5 (Mohs) – Growth Method: CZ Standard Specifications: – Orientation: (111) miscut < 0.3° (Available <0.1°) (110) miscut < 0.3° (Available…
Gadolinium Scandate (GdScO₃) Single Crystal Substrate Physical Properties: – Crystal Structure: Orthorhombic System – Lattice Constant: a=5.45Angstrom , b=5.75Angstrom , c=7.93Angstrom – Melting Point: 2127°C – Density: 6.6 g/cm³ – Growth Method: CZ Standard Specifications: – Orientation: (110) miscut < 0.3° (Available < 0.1°) (001) miscut < 0.3° (Available < 0.1°) (100) miscut < 0.3°…
Gadolinium Scandium Gallium Garnet GSGG (Gd₃Sc₂Ga₃O₁₂) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 6.44 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
Gadolinium Scandium Gallium Garnet GSGG (Gd₃Sc₂Ga₃O₁₂) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 6.44 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° / 16 ±…
Gallium Arsenide (GaAs) Single Crystal Wafers – N-type / P-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° /…
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
Gallium Nitride (GaN) Single Crystal Wafers Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
GaN film on Sapphire Substrates Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…
GaN film on Sapphire wafers Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al₂O₃ Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al₂O₃ Substrate Thickness: 430 ± 25 µm – Al₂O₃ Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al₂O₃ Substrate Roughness:…
Germanium (Ge) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: 5.6575 Angstrom – Melting Point: 937.4 °C – Density: 5.323 g/cm³ – Growth Method: CZ Standard Specifications (by Product): Product 1: – Type/Doping: N-type/Sb-doped – Orientation: (111) ± 0.5° – Resistivity: 5~40 ohm-cm – Surface Finish: Single-Side Polished – Packaging:…
No products in the cart.
To request a quote, please complete the form below. Your quotation should be received within one working day.
