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  • Gallium Arsenide (GaAs) Single Crystal Substrates

    Gallium Arsenide (GaAs) Single Crystal Substrates

    Price range: Kč4,474.28 through Kč9,324.15

    Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° / 16 ±…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Gallium Arsenide (GaAs) Single Crystal Wafers

    Gallium Arsenide (GaAs) Single Crystal Wafers

    Price range: Kč9,670.56 through Kč21,448.80

    Gallium Arsenide (GaAs) Single Crystal Wafers – N-type / P-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° /…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page