HfS₂ FET Device | Exfoliated 2D Transistor

Mechanically Exfoliated HfS₂ FET Device

CHF673.24

Mechanically Exfoliated HfS₂ FET Device

Device Structure:
Au Electrodes / HfS₂ / 300 nm SiO₂ / Si Back-Gated FET

HfS₂ Layer Options:
Few-layer (~5 layers)
Multilayer (~10 layers)
For specific thickness requirements, please contact us.

Device Description & Features:
High-Mobility 2D Semiconductor: Hafnium disulfide (HfS₂) is a layered transition metal dichalcogenide (TMD) with high electron mobility, making it a material for field-effect transistors (FETs). Back-Gated Configuration: The SiO₂/Si back-gate structure supports gate control over the channel conductivity, facilitating low-power and electronic applications.
Mechanically Exfoliated Layers: HfS₂ films with electronic properties.
Gold Electrodes: Ohmic contacts for charge injection and device-contact use.
Tunable Thickness: Different layer numbers allow for studying thickness-dependent electronic properties.

Applications:
Field-Effect Transistors (FETs):
HfS₂-based FETs exhibit high carrier mobility and gate tunability. Flexible and Low-Power Electronics:
Thin-film HfS₂ FETs are used for wearable and flexible electronic devices. Optoelectronic Devices:
HfS₂ exhibits a tunable bandgap and light absorption, and it is used for photodetectors. Quantum & Neuromorphic Computing:
Use in low-dimensional quantum transport studies and neuromorphic computing architectures.