GaTe Crystals

GaTe Crystals

GaTe is a layered semiconductor material with a van der Waals structure, known for its anisotropic optical and electronic properties. It exhibits a direct bandgap, photoluminescence, and environmental stability, supporting optoelectronic devices, quantum materials research, and 2D material studies.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²

Material Properties:
Layered van der Waals Structure: Supports exfoliation into thin layers for 2D material studies.
Direct Bandgap: For optoelectronic and photonic applications.
Anisotropic Optical Properties: Exhibits direction-dependent light absorption and emission.
Environmental Stability: Maintains structural and electronic properties under ambient conditions.

Crystal Structure:
Type: Layered monoclinic structure
Features: Cleavable layers for thin-film fabrication and nanoscale research.

Degree of Exfoliation:
Exfoliation: Readily exfoliates into monolayers or few-layer sheets for research and device integration.

Other Characteristics:
Optoelectronic properties: High photoluminescence and optical absorption for devices.
Quantum Research Applications: Supports exploration of anisotropic electronic transport and quantum effects. Energy

Applications: For thermoelectric systems and catalytic processes.

Applications:
Optoelectronics:
For photodetectors, light-emitting diodes, and photovoltaic devices. Quantum Materials Research:
For studying transport phenomena and anisotropic electronic properties. Energy

Applications:
For thermoelectric devices and energy conversion systems.
2D Material Studies:
For exfoliation into monolayers and integration into van der Waals heterostructures. Sensors:
sensitivity for detecting environmental and chemical stimuli.