Description
ZrTe₅ Crystals (Zirconium Pentatelluride)
ZrTe₅ is a layered topological material with exceptional electronic and optical properties, known for its unique quantum phenomena, including Dirac semimetal behavior, chiral anomaly, and high carrier mobility. It is a highly sought-after material for quantum materials research, optoelectronics, and energy applications. Our ZrTe₅ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and exceptional crystallinity.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²
Material Properties:
Layered Van der Waals Structure: Facilitates exfoliation into thin layers for 2D material studies.
Topological Properties: Exhibits Dirac semimetal behavior and chiral anomaly under magnetic fields.
High Carrier Mobility: Suitable for high-performance electronic applications.
Optical Absorption: Strong absorption in the visible-to-infrared range.
Crystal Structure:
Type: Orthorhombic layered structure
Features: Cleavable layers, ideal for thin-film fabrication and nanoscale research.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research applications.
Other Characteristics:
Quantum Phenomena: Enables studies of topological states, chiral anomaly, and quantum transport.
Electronic Applications: High carrier mobility makes it suitable for advanced electronic devices.
Energy Applications: Potential for thermoelectric devices and energy storage systems.
Applications:
Quantum Materials Research:
Ideal for studying Dirac semimetals, topological properties, and quantum phenomena.
Optoelectronics:
Suitable for photodetectors, sensors, and other photonic technologies.
Energy Applications:
Promising for thermoelectric energy harvesting and thermal management systems.
2D Material Studies:
Perfect for exfoliation into thin layers and integration into van der Waals heterostructures.
Spintronics:
Potential for spin-based devices and investigating spin-orbit coupling effects.
Additional information
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