Description
ZrTe₃ Crystals (Zirconium Triselenide)
ZrTe₃ is a layered transition metal chalcogenide (TMC) with a quasi-one-dimensional (1D) structure, exhibiting fascinating charge density wave (CDW) behavior and excellent electronic properties. Its unique crystal structure and transport characteristics make it an ideal candidate for studying low-dimensional physics, electronic devices, and 2D material applications. Our ZrTe₃ crystals are synthesized using high-temperature chemical vapor transport (CVT) methods, ensuring high purity, excellent crystallinity, and reproducible properties for advanced research.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Material Properties:
Quasi-1D Layered Structure: Facilitates exfoliation into thin sheets for 2D research.
Charge Density Waves (CDW): Exhibits CDW behavior at ~₆3 K, suitable for quantum material studies.
High Conductivity: Displays metallic-like conductivity along certain crystallographic directions.
Thermal Stability: Retains structural and electronic properties under controlled conditions.
Crystal Structure:
Type: Monoclinic layered structure
Features: Chain-like arrangement of zirconium and tellurium atoms, enabling unique anisotropic properties.
Degree of Exfoliation:
Ease of Use: Readily exfoliated into monolayers or few-layer sheets for 2D studies.
Other Characteristics:
Electronic Transport Properties: Exhibits highly anisotropic electronic behavior.
Quantum Behavior: Charge density wave transitions make it ideal for studying low-dimensional electronic interactions.
Environmental Stability: Stable under inert storage and handling conditions.
Applications:
Quantum Materials Research:
Ideal for studying CDW phenomena and correlated electron systems.
2D Material Studies:
Suitable for exfoliation and integration into van der Waals heterostructures.
Electronic Devices:
Promising for use in advanced conductive and optoelectronic devices.
Fundamental Physics Research:
Enables investigations into low-dimensional quantum phenomena and electronic transitions.
Additional information
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